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首页> 外文期刊>Japanese journal of applied physics >Voltage-Pulse Induced Resistance Switching Characteristics in a Cr-Doped SrZrO_3
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Voltage-Pulse Induced Resistance Switching Characteristics in a Cr-Doped SrZrO_3

机译:Cr掺杂SrZrO_3中的电压脉冲感应电阻切换特性

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摘要

The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO_3/SrRuO_3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS → HRS and HRS → LRS switching minimum switching times of ~500 and ~100ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.
机译:已经使用脉冲电压研究了在Pt / Cr掺杂的SrZrO_3 / SrRuO_3器件中的时间分辨双极电阻开关。研究了在高阻状态和低阻状态(HRS和LRS)之间所需的切换时间,它是脉冲高度和宽度的函数。发现电阻切换与短脉冲区域中的脉冲高度的依赖性较小。对于LRS→HRS和HRS→LRS开关,在高于直流开关电压的脉冲高度下,分别需要〜500和〜100ns的最小开关时间。作者将切换时间的不同归因于不同的切换机制。

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  • 来源
    《Japanese journal of applied physics》 |2010年第11期|p.111101.1-111101.3|共3页
  • 作者单位

    Optoelectronic Materials Center, KIST, Seoul 136-791, Republic of Korea,Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea;

    Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea;

    Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea;

    Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea;

    Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea;

    Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53705, U.S.A.;

    Optoelectronic Materials Center, KIST, Seoul 136-791, Republic of Korea;

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