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机译:Cr掺杂SrZrO_3中的电压脉冲感应电阻切换特性
Optoelectronic Materials Center, KIST, Seoul 136-791, Republic of Korea,Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea;
Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea;
Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea;
Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea;
Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea;
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53705, U.S.A.;
Optoelectronic Materials Center, KIST, Seoul 136-791, Republic of Korea;
机译:外延Cr掺杂SrZrO_3薄膜的电阻转换
机译:Cr浓度对掺Cr SrZrO_3薄膜电阻转换和Cr离子表面累积的影响
机译:溅射沉积SrZrO_3:Cr存储膜中低电阻状态的电阻开关特性和设定电压依赖性
机译:SrRuO_3 / Cr掺杂SrZrO_3 /金属结的电阻转换研究
机译:基于钛酸酯的电阻开关器件的电铸特性研究。
机译:通过热激活的Ti向外扩散过程在SrRuO3 / Cr掺杂的SrZrO3 / Pt框架中进行电阻转换模式转换
机译:寻找超导自旋开关:La0:67SrO:33MnO3 / Yba2Cu3O7; +/-双层和三层中的磁化感应电阻开关效应
机译:接触电阻以及材料和工艺变量对开关装置中接触电阻和接触可靠性的影响