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首页> 外文期刊>Japanese journal of applied physics >Enhancement of Light Output Power and Modification of Beam Profile in InGaN/GaN Light Emitting Diodes with Micro Polygon Column Shaped Transparent
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Enhancement of Light Output Power and Modification of Beam Profile in InGaN/GaN Light Emitting Diodes with Micro Polygon Column Shaped Transparent

机译：具有微多边形柱形透明InGaN / GaN发光二极管的光输出功率的增强和光束轮廓的修改

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摘要

We report on the fabrication of GaN-based light-emitting diodes (LEDs) with micro-polygon columns (MPC) obtained by selective area growth (SAG) using the technique of metal organic chemical vapor deposition (MOCVD). The SAG makes it possible to control the density, size and position of the micro polygon columns. The facet structure consists of a polygon column covered with {1101} facets. Columns with rough occur on the (0001) surface. The light output power of the MPC-LED was 53% higher than conventional LED. In addition, the light extraction efficiency of InGaN/GaN LEDs is significantly improved owing to the photon path length is shorter. It is possible to modify the beam profile via shaped transparent layer. Thus, this structure can provide photons with multiple chances of escaping from the LEDs surfaces.
机译：我们报道了使用金属有机化学气相沉积（MOCVD）技术通过选择性区域生长（SAG）获得的具有微多边形柱（MPC）的GaN基发光二极管（LED）的制造。 SAG可以控制微多边形柱的密度，大小和位置。构面结构由覆盖有{1101}构面的多边形列组成。粗糙的列出现在（0001）表面上。 MPC-LED的光输出功率比常规LED高53％。另外，由于光子路径长度更短，InGaN / GaN LED的光提取效率显着提高。可以通过成形的透明层修改光束轮廓。因此，这种结构可以为光子提供从LED表面逃逸的多种机会。

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  • 来源
    《Japanese journal of applied physics》 |2010年第11期|p.112101.1-112101.3|共3页
  • 作者

    Mi So Lee; Hyung Gu Kim; Ji Hye Kang; Jae Hyoung Ryu; Hyun Kyu Kim; Hee Yun Kim; Periyayya Uthirakumar; Chang-Hee Hong;

  • 作者单位

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea;

    School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea;

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