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Effect of Organic Additive on Surface Roughness of Polycrystalline Silicon Film after Chemical Mechanical Polishing

机译:有机添加剂对化学机械抛光后多晶硅膜表面粗糙度的影响

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摘要

The effect of an organic additive on the surface roughness of a polycrystalline silicon (poly-Si) film was investigated by chemical mechanical polishing (CMP). The surface roughness of the polished poly-Si film was markedly reduced by adding 0.001 wt% hydroxyl ethyl cellulose (HEC) and then decreased slightly with further addition of HEC. We concluded that the reduction of surface roughness was attributed to the formation of a hydroplane layer on the poly-Si surface. Evidence of the hydroplane layer was verified by contact angle and X-ray pholoelectron spectroscopy (XPS) measurements.
机译:通过化学机械抛光(CMP)研究了有机添加剂对多晶硅(poly-Si)膜表面粗糙度的影响。通过添加0.001wt%的羟乙基纤维素(HEC),抛光的多晶硅膜的表面粗糙度显着降低,然后通过进一步添加HEC而略微降低。我们得出的结论是,表面粗糙度的降低归因于在多晶硅表面上形成了水平面。通过接触角和X射线光电子能谱(XPS)测量来验证水上飞机层的证据。

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  • 来源
    《Japanese journal of applied physics》 |2010年第1issue1期|010216.1-010216.3|共3页
  • 作者单位

    Advanced Semiconductor Materials and Devices Development Center, Hanyang University, Seoul 133-791, Korea Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea;

    Advanced Semiconductor Materials and Devices Development Center, Hanyang University, Seoul 133-791, Korea Department of Electronics and Communications Engineering, Hanyang University, Seoul 133-791, Korea;

    Advanced Semiconductor Materials and Devices Development Center, Hanyang University, Seoul 133-791, Korea Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea;

    Division of Advanced Materials Science Engineering, Hanyang University, Seoul 133-791, Korea;

    Advanced Semiconductor Materials and Devices Development Center, Hanyang University, Seoul 133-791, Korea Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea Department of Electronics and Communications Engineering, Hanyang University, Seoul 133-791, Korea;

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