Point Defects Induced by Physical Sputtering in Wurtzite-Type GaN Crystal

Kenji Harafuji; Katsuyuki Kawamura

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Point Defects Induced by Physical Sputtering in Wurtzite-Type GaN Crystal

机译：纤锌矿型GaN晶体中物理溅射引起的点缺陷

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A molecular dynamics simulation has been performed to investigate the dynamics of surface morphology and point defects during energetic Ar atom incidence to the wurtzite-type GaN (0001) crystal surface. Ar atoms at three energies, 151, 250, and 500 eV, are repeatedly impinged 30 times. N atoms are preferentially sputtered compared with Ga atoms. Ga atoms are sputtered mostly with N atoms in pairs. Ga and N vacancies are generated as Schottky defects, which are often paired. Frenkel defects are generated only for Ga atoms. There exist no N interstitials inside the crystal. Ga atoms are mobile and can exist as interstitials. The number of Ga vacancies is very similar to that of N vacancies along the depth direction of the crystal.

机译：进行了分子动力学模拟，以研究高能Ar原子入射到纤锌矿型GaN（0001）晶体表面期间表面形态和点缺陷的动力学。三种能量分别为151、250和500 eV的Ar原子被反复撞击30次。与Ga原子相比，优先溅射N原子。 Ga原子大部分被N原子成对溅射。 Ga和N空位是作为肖特基缺陷产生的，通常是成对的。弗伦克尔缺陷仅针对Ga原子产生。晶体内部没有N间隙。镓原子是可移动的，可以作为间隙原子存在。沿着晶体的深度方向，Ga空位的数量与N空位的数量非常相似。

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《Japanese journal of applied physics》 |2010年第1issue1期|011001.1-011001.7|共7页
作者
Kenji Harafuji; Katsuyuki Kawamura;
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Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japa;

Department of Earth and Planetary Science, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8551, Japan;

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Point Defects Induced by Physical Sputtering in Wurtzite-Type GaN Crystal

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