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首页> 外文期刊>Japanese journal of applied physics >Solid State Electrochemical Transistor Based on π-Conjugated Polymer Langmuir-Blodgett Film
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Solid State Electrochemical Transistor Based on π-Conjugated Polymer Langmuir-Blodgett Film

机译：基于π共轭聚合物Langmuir-Blodgett膜的固态电化学晶体管

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摘要

A solid-state electrochemical transistor (ECT) was fabricated using a π-conjugated polymer Langmuir-Blodgett (LB) film, which was constructed from poly(N-dodecylacrylamide) (pDDA) and regioregular-poly(3-hexylthiophene) (RR-PHT) mixture. The π-conjugated polymer LB film was used as a channel layer and poly(ethylene oxide):LiCIO_4 was used as a solid electrolyte. The ECT showed an on/off ratio of 2.3 × 10~3 and a mobility of 7.7 × 10~(-2) cm~2 V~(-1) s~(-1) at a low gate voltage (V_G = -2.0V) with a low charge consumption (1.8 × 10~9 mol of e~(-1) cm~(-2)). Moreover, a clear saturation behavior was observed in the ECT. The saturation behavior was derived from the partial dedoping of RR-PHT located at the drain electrode because of the long channel length and low conductivity of the LB film. The low operation voltage with a clear saturation behavior is favorable for applying the ECT to the fabrication of a disposable sensor.
机译：使用π共轭聚合物Langmuir-Blodgett（LB）膜制造固态电化学晶体管（ECT），该膜由聚（N-十二烷基丙烯酰胺）（pDDA）和区域规则的聚（3-己基噻吩）（RR- PHT）混合物。将π-共轭聚合物LB膜用作沟道层，并将聚（环氧乙烷）：LiClO_4用作固体电解质。 ECT在低栅极电压下（V_G =- 2.0V）的电荷消耗低（e〜（-1）cm〜（-2）为1.8×10〜9 mol）。此外，在ECT中观察到明显的饱和行为。由于LB膜的长沟道长度和低电导率，其饱和行为源自位于漏极的RR-PHT的部分去掺杂。具有清晰饱和行为的低工作电压有利于将ECT应用于一次性传感器的制造。

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  • 来源
    《Japanese journal of applied physics》 |2010年第1issue2期|01AB02.1-01AB02.4|共4页
  • 作者

    Jun Matsui; Masafumi Yamakoshi; Tokuji Miyashita;

  • 作者单位

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;

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