Investigation of Interface Formed between Top Electrodes and Epitaxial NiO Films for Bipolar Resistance Switching

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• 来源
  《Japanese journal of applied physics》 |2010年第3issue1期|p.031102.1-031102.4|共4页
• 作者

  Seung Ran Lee; Hoon Min Kim; Jung Hoon Bak; Yun Daniel Park; Kookrin Char; Hong Woo Park; Deok-Hwang Kwon; Miyoung Kim; Dong-Chirl Kim; Sunae Seo; Xiang-Shu Li; Gyeong-Su Park; Ranju Jung;

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• 作者单位

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea;

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea;

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea Samsung Electronics Co., Ltd., Yongin 446-711, Korea;

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea;

  Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea;

  Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea;

  Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea;

  Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea;

  Samsung Advanced Institute of Technology, Suwon 440-600, Korea;

  Samsung Advanced Institute of Technology, Suwon 440-600, Korea;

  Samsung Advanced Institute of Technology, Suwon 440-600, Korea;

  Samsung Advanced Institute of Technology, Suwon 440-600, Korea;

  Department of Electrophysics, Kwangwoon University, Seoul 139-701, Korea;

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