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首页> 外文期刊>Japanese journal of applied physics >Study of Ion-Beam-Induced Damage and Luminescence Properties in Terbium-Implanted AlGaN
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Study of Ion-Beam-Induced Damage and Luminescence Properties in Terbium-Implanted AlGaN

机译：Ter注入AlGaN中离子束诱导的损伤和发光特性的研究

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摘要

Terbium (Tb) ions were implanted into Al_(0.35)Ga_(0.65)N epitaxial layers at room temperature to investigate ion-beam-induced damage and luminescence properties at various doses of 1 × 10~(12)-2.8 × 10~(16)Tb/cm~2. Rutherford backscattering spectrometry/channeling (RBS/channeling) reveals that ion-beam-induced damage level steeply increases and that the damage cannot be fully suppressed even after rapid thermal annealing at 1100℃, when the dose exceeds 5 × 10~(14)Tb/cm~2. However, cathodoluminescence (CL) intensity related to Tb~(3+) transitions increased initially and saturated above a dose of 1 × 10~(13)Tb/cm~2. Furthermore, transient decay time determined by time-resolved photoluminescence (TRPL) decreased faster and a fast decay component related to the formation of nonradiative Tb-defect complexes became dominant, as Tb ion dose increases. Therefore, the results suggest that Tb-related luminescence properties are much susceptible to defects and nonradiative defects, namely, Tb-defect complexes, are formed under low-dose conditions even at a very low structural defect density.
机译：在室温下将T（Tb）离子注入Al_（0.35）Ga_（0.65）N外延层中以研究离子束在1×10〜（12）-2.8×10〜（不同剂量）下的损伤和发光性能16）Tb /厘米〜2。卢瑟福背散射光谱/通道法（RBS /通道）揭示，当剂量超过5×10〜（14）Tb时，即使在1100℃快速热退火后，离子束引起的损伤水平也急剧增加，并且无法完全抑制损伤。 /厘米〜2。然而，与Tb〜（3+）跃迁有关的阴极发光（CL）强度最初增加，并在1×10〜（13）Tb / cm〜2的剂量以上达到饱和。此外，随着Tb离子剂量的增加，由时间分辨光致发光（TRPL）确定的瞬态衰减时间下降得更快，并且与非辐射性Tb缺陷复合物的形成有关的快速衰减成分变得占主导地位。因此，结果表明，与Tb有关的发光特性对缺陷非常敏感，即使在非常低的结构缺陷密度下，在低剂量条件下仍会形成非辐射缺陷，即Tb缺陷复合物。

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  • 来源
    《Japanese journal of applied physics》 |2010年第3issue1期|p.032401.1-032401.5|共5页
  • 作者

    Ji-Ho Park; Akihiro Wakahara; Hiroshi Okada; Yuzo Furukawa; Yong-Tae Kim; Ho-Jung Chang; Jonghan Song; Sangwon Shin; Jong-Han Lee; Shin-ichiro Sato; Takeshi Ohshima;

  • 作者单位

    Department of Electronics and Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan;

    Department of Electronics and Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan;

    Department of Electronics and Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan;

    Department of Electronics and Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan;

    Nano-Science Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea;

    Department of Electronics Engineering, Dankook University, San #29, Anseo-dong, Dongnam-gu, Cheonan, Chungnam 330-714, Korea;

    Nano-Materials Analysis Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea;

    Nano-Materials Analysis Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea;

    Department of Engineering, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;

    Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292, Japan;

    Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292, Japan;

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