Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation

著录项

• 来源
  《Japanese journal of applied physics》 |2010年第4issue1期|P.044001.1-044001.5|共5页
• 作者

  Jun Ogi; Mohammad Adel Ghiass; Tetsuo Kodera; Yoshishige Tsuchiya; Ken Uchida; Shunri Oda; Hiroshi Mizuta;

  展开▼
• 作者单位

  Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan SORST-JST (Japan Science and Technology Agency), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;

  rnSchool of Electronics and Computer Science, University of Southampton, Highfield, Southampton, Hampshire SO17 1BJ, U.K.;

  rnQuantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan;

  rnSchool of Electronics and Computer Science, University of Southampton, Highfield, Southampton, Hampshire SO17 1BJ, U.K. SORST-JST (Japan Science and Technology Agency), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;

  rnDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan SORST-JST (Japan Science and Technology Agency), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;

  rnQuantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan SORST-JST (Japan Science and Technology Agency), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;

  rnSchool of Electronics and Computer Science, University of Southampton, Highfield, Southampton, Hampshire SO17 1BJ, U.K. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan SORST-JST (Japan Science and Technology Agency), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;

  展开▼
• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词