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首页> 外文期刊>Japanese journal of applied physics >Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization annealing as Stress Technique in n-Metal-Oxide-Semiconductor Field-Effect Transistor
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Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization annealing as Stress Technique in n-Metal-Oxide-Semiconductor Field-Effect Transistor

机译：分子碳离子注入和重结晶退火将碳掺入取代硅位点中，作为应力技术在n-金属-氧化物-半导体场效应晶体管中的应用

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摘要

Since the lattice constant of silicon-carbon (Si:C) is smaller than that of Si, Si:C embedded in the source and draln (e-Si:C S/D) can induce tensile stress in the channel and improve the electron mobility of n-metal-oxide-semiconductor field-effect transistor (nMOSFETs). In this research, molecular carbon (C) ion implantation and recrystallization schemes employed to achieve stralned Si:C films with a high substitutionally incorporated carbon concentration ([C]_(sub)) and a high ratio of substitution were studied. Several recrystallization techniques including rapid-thermal-annealing (RTA)-based solid phase epitaxy (SPE), spike annealing, and nonmelt laser annealing have been used to optimize C incorporation into Si and straln application. Results of these different implantation and annealing techniques are compared and discussed. Furthermore, we proposed the first recrystallization by nonmelt laser annealing and the co-incorporation of a dopant that increases the rate of Si regrowth and has a covalent radius slightly different from that of Si. These processes markedly promoted the recrystallization of C densely incorporated in an amorphous Si layer and improved the crystallinity of stralned Si:C films while malntalning a high [C]_(sub) at a high ratio of substitution.
机译：由于硅碳（Si：C）的晶格常数小于Si，因此嵌入在源极和沟道中的Si：C（e-Si：CS / D）可以在沟道中引起张应力并改善电子迁移率金属氧化物半导体场效应晶体管（nMOSFET）的结构。在这项研究中，研究了分子碳（C）离子注入和重结晶方案，以实现具有高取代取代碳浓度（[C] _（sub））和高取代比的交错Si：C薄膜。包括基于快速热退火（RTA）的固相外延（SPE），尖峰退火和非熔融激光退火在内的几种重结晶技术已被用于优化将C掺入Si和施镀工艺中。比较和讨论了这些不同的植入和退火技术的结果。此外，我们提出了通过非熔融激光退火进行的第一次重结晶以及共掺入掺杂剂的方法，该掺杂剂可提高Si的再生速率，并且其共价半径与Si的半径稍有不同。这些过程显着促进了紧密结合在非晶硅层中的C的再结晶，并改善了交错的Si：C膜的结晶度，同时使高[C] _（sub）的取代比例高。

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  • 来源
    《Japanese journal of applied physics》 |2010年第4issue2期|P.04DA05.1-04DA05.5|共5页
  • 作者

    Hiroshi Itokawa; Kiyotaka Miyano; Yasunori Oshima; Ichiro Mizushima; Kyoichi Suguro;

  • 作者单位

    Advanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan;

    rnAdvanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan;

    rnAdvanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan;

    rnAdvanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan;

    rnAdvanced Unit Process Technology Department, Device Process Development Center, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan;

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