Current Reduction Mechanism in Organic Thin Film Transistors

Yoshinori Ishikawa; Yasuo Wada; Ken Tsutsui; Toru Toyabe

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Current Reduction Mechanism in Organic Thin Film Transistors

机译：有机薄膜晶体管中的电流减少机制

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Hidden origin of current reduction mechanism in organic thin film transistor (OTFT) structure is investigated based on a device simulation, which makes it possible to derive current-voltage (I-V) characteristics, potential distribution and carrier concentration inside a device by solving Poisson's equation and continuity equation. It is made clear that the device performances improve more than twice to three hundred times only by inserting high impurity concentration layer under the source/drain contact region. The cause of the inferior characteristics of conventional OTFT devices is attributed to the deficiency of carriers in the channel region, resulting to a very high potential drop at the source-channel interface, thus leading to an apparent decrease of carrier mobility. These results clearly indicate the direction of OTFT technology development, i.e., development of high carrier concentration, or heavily doped organic semiconductor materials.

机译：基于器件仿真研究了有机薄膜晶体管（OTFT）结构中电流减小机制的隐性源，这使得可以通过求解泊松方程来推导器件内部的电流-电压（IV）特性，电势分布和载流子浓度。连续性方程。很明显，仅通过在源极/漏极接触区下面插入高杂质浓度层，器件的性能提高了两倍到三百倍。常规OTFT器件特性较差的原因归因于沟道区域中载流子的不足，从而导致源-沟道界面处的电位降非常高，从而导致载流子迁移率明显下降。这些结果清楚地表明了OTFT技术的发展方向，即高载流子浓度或重掺杂有机半导体材料的发展。

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《Japanese journal of applied physics》 |2010年第4issue2期|P.04DK01.1-04DK01.5|共5页
作者
Yoshinori Ishikawa; Yasuo Wada; Ken Tsutsui; Toru Toyabe;
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Bio-Nano Electronics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan;

rnBio-Nano Electronics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan;

rnBio-Nano Electronics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan;

rnBio-Nano Electronics Research Center, Toyo University, Kawagoe, Saitama 350-8585, Japan;

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Current Reduction Mechanism in Organic Thin Film Transistors

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