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首页> 外文期刊>Japanese journal of applied physics >Copper-Holmium Alloy Film for Reliable Interconnects
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Copper-Holmium Alloy Film for Reliable Interconnects

机译：可靠互连的铜-合金膜

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摘要

We fabricate reliable interconnects via advanced barrierless metallization by cosputtering a pure copper (Cu) film with small amounts of holmium nitride (HoN_x) on a silicon (Si) substrate. No noticeable interaction occurs between the resulting Cu(HoN_x) film and the substrate even after heating at 660 ℃ for 1 h. The resistivity of the alloy film, which remains stable after five cycles of heating at 600 ℃ (total: 2.5 h), is high under the as-deposited condition, but decreases to ～3.0 μΩ cm after annealing. The leakage current of the alloy film is three times lower than that of the pure Cu film. The correlation between the leakage current and the time-dependent dielectric breakdown (TDDB) lifetime reveals that the alloy film has a TDDB lifetime of > 10 years. Furthermore, the alloy film adheres better to the Si substrate than does the pure Cu film. Our alloy film thus has improved features that are desirable for a reliable interconnect.
机译：我们通过在硅（Si）基板上共溅射纯铜（Cu）膜和少量氮化nitride（HoN_x）来通过先进的无障碍金属化工艺来制造可靠的互连。即使在660℃下加热1 h，所得的Cu（HoN_x）膜与基板之间也没有明显的相互作用。合金膜的电阻率在沉积条件下较高，在600℃加热五个循环（总计2.5 h）后仍保持稳定，但在退火后降低至约3.0μΩcm。合金膜的泄漏电流是纯铜膜的泄漏电流的三倍。泄漏电流与时间相关的介电击穿（TDDB）寿命之间的相关性表明，合金膜的TDDB寿命> 10年。此外，与纯Cu膜相比，合金膜更好地粘附到Si衬底上。因此，我们的合金膜具有可靠互连所需的改进功能。

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  • 来源
    《Japanese journal of applied physics》 |2010年第5issue3期|P.05FA03.1-05FA03.4|共4页
  • 作者

    Chon-Hsin Lin; Wen-Kuan Leau; Cheng-Hui Wu;

  • 作者单位

    Department of Environmental Engineering, Chin-Min Institute of Technology, Tou-Fen, Taiwan 351;

    Institute of Materials Engineering, National Taiwan Ocean University, Keelung, Taiwan 202;

    Graduate Institute of Materials Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan;

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