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首页> 外文期刊>Japanese journal of applied physics >A-Site-Modified Perovskite Nanosheets and Their Integration into High-κ Dielectric Thin Films with a Clean Interface
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A-Site-Modified Perovskite Nanosheets and Their Integration into High-κ Dielectric Thin Films with a Clean Interface

机译：A-站点修饰的钙钛矿纳米片及其与具有清洁界面的高介电常数介电薄膜的集成

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摘要

We investigated dielectric properties of La_(1-x)Eu_xNb_2O_7 perovskite nanosheets in order to study the effect of A-site modification on dielectric properties. Langmuir-Blodgett deposition was employed to fabricate multilayer nanofilms of perovskite nanosheets. In these nanosheets, A-site modification with Eu~(3+) ions improves the leakage current characteristics and, at the same time, reduces permittivity. The slight modification with Eu~(3+) ions in La_(0.95)Nb_O_7 nanosheets causes a 50% reduction in e, value. We also discuss the high-κ properties of La_(0.95)Nb_2O_7 nanosheets by performing detailed investigations based on first-principles calculations and interfacial structures.
机译：我们研究了La_（1-x）Eu_xNb_2O_7钙钛矿纳米片的介电性能，以研究A位修饰对介电性能的影响。 Langmuir-Blodgett沉积被用来制造钙钛矿纳米片的多层纳米膜。在这些纳米片中，用Eu〜（3+）离子进行A位修饰可改善漏电流特性，同时降低介电常数。 La_（0.95）Nb_O_7纳米片中Eu〜（3+）离子的轻微修饰导致e，值降低了50％。我们还通过基于第一性原理计算和界面结构进行详细研究，讨论了La_（0.95）Nb_2O_7纳米片的高κ性能。

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  • 来源
    《Japanese journal of applied physics》 |2010年第9issue2期|p.09MA01.1-09MA01.5|共5页
  • 作者

    Bao-Wen Li; Minoru Osada; Tadashi C. Ozawa; Kosho Akatsuka; Yasuo Ebina; Renzi Ma; Kanta Ono; Hiroshi Funakubo; Takayoshi Sasaki;

  • 作者单位

    International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan;

    rnInternational Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;

    rnInternational Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;

    rnInternational Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;

    rnInternational Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;

    rnInternational Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;

    rnInstitute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan;

    rnDepartment of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan;

    rnInternational Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan CREST, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;

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