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首页> 外文期刊>Japanese journal of applied physics >Effect of CuO Doping on (Bi,Na)_(0.83)Ba_(0.17)TiO_3 Piezoelectric Ceramics
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Effect of CuO Doping on (Bi,Na)_(0.83)Ba_(0.17)TiO_3 Piezoelectric Ceramics

机译：CuO掺杂对（Bi，Na）_（0.83）Ba_（0.17）TiO_3压电陶瓷的影响

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摘要

(Bi_(0.5)Na_(0.5))_(0.83)Ba_(0.17)TiO_3-x wt% CuO ceramics were prepared by a conventional ceramics fabrication method. The effects of CuO doping on densification, microstructure, and electrical properties are presented. The 0.2 wt% CuO-doped sample sintered at 1060℃ for 2h exhibits good properties: a shrinkage rate of 16.5%, a relative density of 97%, a relative dielectric constant ε_(33)~T/ε_0 of 555 and a dielectric loss of 2.10% at 1 kHz, an electromechanical coupling factor k_p of 18.0%, a piezoelectric charge coefficient d33 of 148pC/N, a frequency constant N_p of 3096 Hz-m, a mechanical quality factor Q_m of 52, a depolarization temperature T_d of 218℃, and a temperature corresponding to the maximum dielectric constant T_m of 249℃.
机译：（Bi_（0.5）Na_（0.5））_（0.83）Ba_（0.17）TiO_3-x wt％CuO陶瓷通过常规的陶瓷制造方法制备。提出了CuO掺杂对致密化，微观结构和电性能的影响。 0.260％CuO掺杂的样品在1060℃下烧结2h具有良好的性能：收缩率为16.5％，相对密度为97％，相对介电常数ε_（33）〜T /ε_0为555，介电损耗在1 kHz时为2.10％，机电耦合系数k_p为18.0％，压电电荷系数d33为148pC / N，频率常数N_p为3096 Hz-m，机械品质因数Q_m为52，去极化温度T_d为218 ℃，并且对应于249℃的最大介电常数T_m的温度。

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  • 来源
    《Japanese journal of applied physics》 |2010年第9issue2期|p.09MD06.1-09MD06.3|共3页
  • 作者

    Junhua Lv; Tomoaki Karaki; Masatoshi Adachi;

  • 作者单位

    Department of Intelligent Systems Design Engineering, Faculty of Engineering, Toyoma Prefectural University, Imizu, Toyama 939-0398, Japan School of Materials Science and Engineering, Shenyang University of Chemical Technology, Shenyang 110142, China;

    rnDepartment of Intelligent Systems Design Engineering, Faculty of Engineering, Toyoma Prefectural University, Imizu, Toyama 939-0398, Japan;

    rnDepartment of Intelligent Systems Design Engineering, Faculty of Engineering, Toyoma Prefectural University, Imizu, Toyama 939-0398, Japan;

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