Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO_2 Films Prepared by Photochemical Techniques

Masaya Ichimura; Tetsuya Sueyoshi

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Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO_2 Films Prepared by Photochemical Techniques

机译：基于光化学技术制备的SnO_2薄膜对氢具有高灵敏度的室温气体传感器

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Resistive gas sensors with a high sensitivity to hydrogen at room temperature were fabricated. SnO_2 films were deposited by photochemical deposition using an SnSO_4 solution, and Pd was doped by photochemical doping using a PCl_2 solution. An interdigit Au electrode was formed, and then the samples were annealed in nitrogen atmosphere at various temperatures. The sensitivity and response speed depended on the annealing temperature. For the sample annealed at 200 ℃, the conductivity increased by a factor of 10~4 upon exposure to 5000 ppm hydrogen within 1 min. The transient response was analyzed using a simple theoretical model. The sensor current was shown to be controlled by a Schottky barrier at grain boundaries, and the transient response was well fitted by a double-exponential function.

机译：制造了在室温下对氢气具有高灵敏度的电阻式气体传感器。使用SnSO_4溶液通过光化学沉积来沉积SnO_2膜，并使用PCl_2溶液通过光化学掺杂来掺杂Pd。形成叉指状Au电极，然后将样品在氮气气氛中在不同温度下退火。灵敏度和响应速度取决于退火温度。对于在200℃退火的样品，在1分钟内暴露于5000 ppm的氢气中，电导率增加了10〜4倍。使用简单的理论模型分析了瞬态响应。传感器电流显示出受晶界处的肖特基势垒控制，瞬态响应通过双指数函数很好地拟合。

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《Japanese journal of applied physics》 |2009年第1期|015503.1-015503.5|共5页
作者
Masaya Ichimura; Tetsuya Sueyoshi;
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Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology,Gokiso, Showa, Nagoya 466-8555, Japan;

Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology,Gokiso, Showa, Nagoya 466-8555, Japan;

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3. Room temperature gas sensitivity of ultrathin SnO_2 films prepared from Langmuir-Blodgett film precursors [J] . Sipra Choudhury, C. A. Betty, K. G. Girija, Applied Physics Letters . 2006,第7期

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Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO_2 Films Prepared by Photochemical Techniques

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