Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization

Kaoru Toko; Taizoh Sadoh; Masanobu Miyao

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Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization

机译：压痕诱导固相结晶在绝缘子上控制位置生长SiGe晶粒

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Indentation-induced solid-phase crystallization (SPC) was proposed to achieve position-controlled crystal growth of Si_(1-χ)Ge_χ (χ: 0-1) on insulating substrates. The results demonstrated that large SiGe grains (>2μm) over the entire range of Ge fractions were grown at controlled positions without using catalyst metals. In addition, crystal regions were predominantly oriented in the (111) direction for samples with low Ge fractions (<30%), while crystal regions became randomly oriented with increasing Ge fraction (>30%). Although the incubation times of indentation-induced SPC are longer than those of Ni-imprint-induced SPC, indentation-induced SPC is attractive because the crystal grains do not include metals which would degrade the transistor performance.

机译：提出了压痕诱导固相结晶（SPC），以实现Si_（1-χ）Ge_χ（χ：0-1）在绝缘基板上的位置控制晶体生长。结果表明，在不使用催化剂金属的情况下，整个Ge组分范围内的大SiGe晶粒（>2μm）均在受控位置生长。另外，对于具有低Ge分数（<30％）的样品，晶体区域主要沿（111）方向取向，而随着Ge分数（> 30％）的增加，晶体区域变得随机取向。尽管压痕诱导的SPC的孵育时间长于Ni压印诱导的SPC的孵育时间，但是压痕诱导的SPC是有吸引力的，因为晶粒不包含会降低晶体管性能的金属。

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来源
《Japanese journal of applied physics》 |2009年第3issue3期|34-37|共4页
作者
Kaoru Toko; Taizoh Sadoh; Masanobu Miyao;
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Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan;

Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan;

Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan;

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1. Indentation-induced low-temperature solid-phase crystallization of Si_(1-x)Ge_x (x=0-1) on insulator [J] . Kaoru Toko, Taizoh Sadoh, Masanobu Miyao Applied Physicsletters . 2009,第19期

机译：绝缘体上Si_（1-x）Ge_x（x = 0-1）的压痕诱导低温固相结晶
2. Low temperature solid-phase crystallization of SiGe on insulator for future devices [J] . Masanobu Miyao, Isao Tsunoda, Hiroshi Kanno, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2003,第5期

机译：SiGe在绝缘体上的低温固相结晶，可用于未来的器件
3. Low temperature solid-phase crystallization of SiGe on insulator for future devices [J] . Masanobu Miyao, Isao Tsunoda, Hiroshi Kanno, 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2003,第3期

机译：SiGe在绝缘体上的低温固相结晶，可用于未来的器件
4. Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization [C] . T. Sadoh, K. Toko, M.Miyao SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices . 2008

机译：压痕诱导固相结晶在绝缘子上形成SiGe准单晶晶粒
5. Effect of self-generated mechanical field on spatiotemporal growth of polymer single crystals, hedrites, and spherulites during isothermal crystallization. [D] . Mehta, Rujul. 2003

机译：自生机械场对等温结晶过程中聚合物单晶，杂晶和球晶的时空生长的影响。
6. High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization [O] . Kaoru Toko, Ryota Yoshimine, Kenta Moto, -1

机译：通过控制前体原子密度以进行固相结晶而形成的绝缘体上的高空穴迁移率多晶Ge
7. Metal-induced solid-phase crystallization of amorphous SiGe films on insulator [O] . Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, 2014

机译：绝缘体上非晶siGe薄膜的金属诱导固相结晶
8. Solid-Phase Growth of Large Aligned Grains During Scanned Laser Crystallization of Amorphous Ge Films on Fused Silica [R] . Fan, J. C. C., Zeiger, H. J., Gale, R. P., 1979

机译：熔融石英非晶Ge薄膜扫描激光晶化过程中大对齐晶粒的固相生长

Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization

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