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首页> 外文期刊>Japanese journal of applied physics >Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays
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Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

机译:用于有源矩阵有机发光显示器的非晶In-Ga-Zn-O薄膜晶体管电流缩放像素电极电路

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摘要

In this paper, we analyze application of amorphous In-Ga-Zn-O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-lnGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compare to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-lnGaZnO TFT pixel circuit can compensate for the drive TFT threshold voltage variation (△V_T) within acceptable operating error range.
机译:在本文中,我们分析了非晶In-Ga-Zn-O薄膜晶体管(a-InGaZnO TFT)在可用于3英寸电流缩放像素电极电路中的应用。四分之一视频图形阵列(QVGA)全色有源矩阵有机发光显示器(AM-OLED)。基于a-InGaZnO TFT和OLED实验数据的仿真结果表明,与使用氢化非晶硅(a-Si:H)TFT的同一电路相比,器件尺寸和工作电压均可降低。此外,a-InGaZnO TFT像素电路可以在可接受的工作误差范围内补偿驱动TFT阈值电压变化(△V_T)。

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  • 来源
    《Japanese journal of applied physics》 |2009年第3issue3期|118-124|共7页
  • 作者单位

    Organic and Molecular Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A.;

    Canon Research Center, Canon Inc., 30-2 Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan;

    Organic and Molecular Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A.;

    Canon Research Center, Canon Inc., 30-2 Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501, Japan;

    Organic and Molecular Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109, U.S.A.;

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