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首页> 外文期刊>Japanese journal of applied physics >Irradiation-Damages in Atmospheric Plasma Used in a Resist Ashing Process for Thin Film Transistors
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Irradiation-Damages in Atmospheric Plasma Used in a Resist Ashing Process for Thin Film Transistors

机译：薄膜晶体管抗蚀灰化工艺中使用的大气等离子体中的辐照损伤

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摘要

We used an on-wafer UV photon monitor to measure the amount of UV photon irradiation on the substrate surface of a thin film transistor (TFT) device in N_2/O_2 atmospheric plasma. We found that the amount of UV photon irradiation on the surface strongly depended on the ratio of N_2 to O_2 in the plasma. On the other hand, no irradiation of charged particles was observed by using this method. Additionally, we used TFTs with a single drain (SD) and lightly doped drain (LDD) structures as well as UV filters of slide glass (transparent above 280 nm) and synthetic quarts (transparent above 170nm) to investigate the degradation of the TFTs. We found that UV photon irradiation significantly degraded TFT electrical characteristics in atmospheric plasma. An on-current decrease was observed only for LDD TFT when UV wavelength below 280 nm was irradiated. On the other hand, we observed an off-current increase for both types of TFT when UV light with a wavelength of less than 170nm was irradiated. We will discuss a possible mechanism of the degradation.
机译：我们使用晶片上的紫外线光子监视器来测量N_2 / O_2大气等离子体中薄膜晶体管（TFT）器件的基板表面上的紫外线光子照射量。我们发现，表面上的紫外线光子辐照量强烈取决于等离子体中N_2与O_2的比例。另一方面，使用该方法未观察到带电粒子的照射。此外，我们使用具有单漏极（SD）和轻掺杂漏极（LDD）结构的TFT以及载玻片（在280 nm以上透明）和合成石英（在170 nm以上透明）的UV滤光片来研究TFT的退化。我们发现紫外线光子辐照显着降低了大气等离子体中的TFT电特性。仅当照射低于280 nm的UV波长时，才观察到LDD TFT的导通电流降低。另一方面，当照射波长小于170nm的紫外线时，我们观察到两种TFT的截止电流均增加。我们将讨论降解的可能机制。

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  • 来源
    《Japanese journal of applied physics》 |2009年第3issue3期|43-47|共5页
  • 作者

    Taiki Sato; Akira Ueno; Takuya Yara; Eiji Miyamoto; Yukiharu Uraoka; Tomohiro Kubota; Seiji Samukawa;

  • 作者单位

    Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    NBO Development Center, Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba, Ibaraki 300-4292, Japan;

    NBO Development Center, Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba, Ibaraki 300-4292, Japan;

    Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192, Japan;

    Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

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