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Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing

机译：氢退火4H-SiC微沟槽的形状转变

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摘要

This study investigates the shape transformation of 4H-SiC microtrenches that occurs during high-temperature hydrogen annealing, which is used to improve growth on such prepared substrates. The trenches have micron-sized widths and depths and were annealed in hydrogen ambient at temperatures of 1400-1600℃ for 30-3600s. After hydrogen annealing, cross-sectional images of the samples were obtained by scanning electron microscopy (SEM). These SEM images reveal that the top and bottom trench corners become rounded during hydrogen annealing. The top trench comers become rounded by an etching reaction, whereas the bottom trench corners become rounded as a result of a regrowth phenomenon that involves the transportation of atoms. This study analyzes the mechanism of these transformations in terms of Mullins' continuum model. The results suggest that the evaporation-condensation process is dominant in the case of SiC annealing.
机译：这项研究调查了在高温氢退火过程中发生的4H-SiC微沟槽的形状转变，该形状转变用于改善在这种制备的衬底上的生长。这些沟槽具有微米级的宽度和深度，并在1400-1600℃的氢气环境中退火30-3600s。氢退火后，通过扫描电子显微镜（SEM）获得样品的横截面图像。这些SEM图像显示，在氢退火过程中，顶部和底部沟槽的角变圆了。顶部沟槽拐角因蚀刻反应而变圆，而底部沟槽拐角由于涉及原子传输的再生现象而变圆。本研究根据穆林斯的连续谱模型分析了这些转变的机制。结果表明，在SiC退火的情况下，蒸发-冷凝过程占主导地位。

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  • 来源
    《Japanese journal of applied physics》 |2009年第4issue1期|54-56|共3页
  • 作者

    Akio Takatsuka; Yasunori Tanaka; Koji Yano; Tsutomu Yatsuo; Yuuki Ishida; Kazuo Arai;

  • 作者单位

    Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan Interdisciplinary Graduate School of Medical and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan;

    Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

    Interdisciplinary Graduate School of Medical and Engineering, University of Yamanashi, 4-3-11 Takeda, Kofu 400-8511, Japan;

    Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

    Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

    Research and Innovation Promotion Office, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan;

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