...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal-Oxide-Semiconductor Field-Effect Transistors
【24h】

Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal-Oxide-Semiconductor Field-Effect Transistors

机译：氧化物厚度波动和局部栅极耗尽对金属氧化物半导体场效应晶体管阈值电压变化的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Threshold voltage (V_(th)) variations induced by oxide thickness fluctuation (OTF) and local gate depletion (LGD) in metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied using classical three-dimensional (3D) drift-diffusion (DD) simulations. The models for both OTF and LGD are based on transmission electron microscopy (TEM) observations. OTF is generated by random roughness steps at a SiO_2/Si interface and LGD is generated by the random size and position of grains in a polycrystalline silicon (poly-Si) gate. The impact of both models on V_(th) variation and its distribution are investigated and compared with measured data. The Takeuchi coefficient B_(VT) is used to analyze V_(th) variation. It is found that, although both OTF and LGD have an impact on V_(th) variation, their influences are small in terms of B_(VT) value, the dependence of B_(VT) on N_a and T_(inv), and the V_(th) distribution.
机译：使用经典的三维（3D）漂移扩散技术研究了金属氧化物半导体场效应晶体管（MOSFET）中的氧化物厚度波动（OTF）和局部栅极耗尽（LGD）引起的阈值电压（V_（th））变化（DD）模拟。 OTF和LGD的模型均基于透射电子显微镜（TEM）观察结果。 OTF是通过SiO_2 / Si界面处的随机粗糙度台阶生成的，而LGD是通过多晶硅（poly-Si）栅极中晶粒的随机大小和位置生成的。研究了两个模型对V_（th）变化及其分布的影响，并与实测数据进行了比较。 Takeuchi系数B_（VT）用于分析V_（th）变化。发现尽管OTF和LGD都对V_（th）的变化有影响，但是它们的影响在B_（VT）值，B_（VT）对N_a和T_（inv）的依赖性以及V_（th）分布。

著录项

  • 来源
    《Japanese journal of applied physics》 |2009年第6issue1期|064504.1-064504.5|共5页
  • 作者

    Arifin Tamsir Putra; Takaaki Tsunomura; Akio Nishida; Shiro Kamohara; Kiyoshi Takeuchi; Toshiro Hiramoto;

  • 作者单位

    Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;

    MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

    Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan MIRAI-Selete, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号