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首页> 外文期刊>Japanese journal of applied physics >Monolithic Fabrication of Two-Color InAs Quantum Dots for Integrated Optical Devices by Using a Rotational Metal Mask
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Monolithic Fabrication of Two-Color InAs Quantum Dots for Integrated Optical Devices by Using a Rotational Metal Mask

机译：利用旋转金属掩模单片制造集成光学器件的双色InAs量子点

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摘要

Selective-area growth (SAG) of multiple sets of closely spaced two-color InAs quantum dots (QDs) on a 2-in. GaAs wafer was achieved using a rotational metal mask (MM) and the molecular beam epitaxy method. The MM with windows on a rotationally asymmetric pattern enabled 32 sets of closely spaced SAG regions on a 2-in. GaAs wafer by rotating the MM by 180°. By depositing In_(0.2)Ga_(0.8)As strain-reducing layers with different thicknesses on each selective-area-grown QD, the emission wavelengths of the QDs were controlled. In addition to the fabrication of multiple sets of QDs, we investigated the temperature distribution on the substrate surface during the SAG; the temperature distribution was observed to be affected by the heat radiation from the MM. We also improved the MM for obtaining QDs with uniform optical quality. The proposed method is a promising method for the mass production of QDs for use in various QD-based integrated device applications such as our proposed all-optical devices based on QDs and photonic crystal.
机译：2英寸上多组紧密排列的双色InAs量子点（QD）的选择性区域生长（SAG）。使用旋转金属掩模（MM）和分子束外延方法获得了GaAs晶片。带有非旋转对称图案窗口的MM在2英寸上启用了32组紧密间隔的SAG区域。将MM旋转180°，即可得到GaAs晶片。通过在每个选择区域生长的QD上沉积不同厚度的In_（0.2）Ga_（0.8）As应变减小层，可以控制QD的发射波长。除了制造多组量子点之外，我们还研究了SAG期间衬底表面的温度分布；观察到温度分布受到MM散热的影响。我们还改进了MM，以获取具有均匀光学质量的QD。所提出的方法是用于各种基于QD的集成器件应用中的QD批量生产的有前途的方法，例如我们提出的基于QD和光子晶体的全光学器件。

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  • 来源
    《Japanese journal of applied physics》 |2009年第6issue1期|065502.1-065502.4|共4页
  • 作者

    Nobuhiko Ozaki; Shunsuke Ohkouchi; Yoshiaki Takata; Naoki Ikeda; Yoshinori Watanabe; Yoshimasa Sugimoto; Kiyoshi Asakawa;

  • 作者单位

    Center for Tsukuba Advanced Research Alliance (TARA), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan;

    Center for Tsukuba Advanced Research Alliance (TARA), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan Nano Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan;

    Center for Tsukuba Advanced Research Alliance (TARA), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan;

    National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;

    Center for Tsukuba Advanced Research Alliance (TARA), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan;

    National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;

    Center for Tsukuba Advanced Research Alliance (TARA), University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;

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