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首页> 外文期刊>Japanese journal of applied physics >Properties of Sr_7Nb_(13)O_(36)/Nb_2O_5/Sr_7Nb_(13)O_(36) Laminated Films for Gigabit Memory Capacitors
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Properties of Sr_7Nb_(13)O_(36)/Nb_2O_5/Sr_7Nb_(13)O_(36) Laminated Films for Gigabit Memory Capacitors

机译：千兆存储电容器的Sr_7Nb_（13）O_（36）/ Nb_2O_5 / Sr_7Nb_（13）O_（36）叠层膜的性质

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摘要

Properties of Sr_7Nb_(13)O_(36)/Nb_2O_5/Sr_7Nb_(13)O_(36) laminated films for gigabit memory capacitors were investigated. The equivalent oxide thicknesses (EOT), dielectric constant, band gap and leakage current for a single layer Sr_7Nb_(13)O_(36) having 10nm film thickness were 1.12nm, 34.8, 4.45eV and 3 × 10~(-9)A/cm~2 at 1 V, respectively. Those properties for a single layer Nb_2O_5 having 20 nm thickness were 0.72nm, 108, 4.25eV, and 2 × 10~(-8)A/cm~2, respectively. The Sr_7Nb_(13)O_(36)/Nb_2O_5/Sr_7Nb_(13)O_(36) laminated films satisfied the EOT of 0.77 nm, effective dielectric constant of 51, effective band gap of 4.35 eV and leakage current density of 6.4 × 10~(-9)A/cm~2 at 1 V. The fraction of applied voltage across the Sr_7Nb_(13)O_(36) film was dominant so that the voltage across the high dielectric constant Nb_2O_5 film could be reduced. The Sr_7Nb_(13)O_(36)/Nb_2O_5/Sr_7Nb_(13)O_(36) laminated film is a solution for gigabit memory capacitors.
机译：研究了用于千兆位存储电容器的Sr_7Nb_（13）O_（36）/ Nb_2O_5 / Sr_7Nb_（13）O_（36）叠层膜的性能。具有10nm膜厚的单层Sr_7Nb_（13）O_（36）的等效氧化物厚度（EOT），介电常数，带隙和泄漏电流为1.12nm，34.8、4.45eV和3×10〜（-9）A在1 V时分别为/ cm〜2。具有20nm厚度的单层Nb_2O_5的那些性质分别为0.72nm，108、4.25eV和2×10 8（-8）A / cm 2。 Sr_7Nb_（13）O_（36）/ Nb_2O_5 / Sr_7Nb_（13）O_（36）叠层膜的EOT为0.77 nm，有效介电常数为51，有效带隙为4.35 eV，漏电流密度为6.4×10〜在1 V时为（-9）A / cm〜2。Sr_7Nb_（13）O_（36）薄膜上施加的电压比例占主导，因此高介电常数Nb_2O_5薄膜上的电压可以降低。 Sr_7Nb_（13）O_（36）/ Nb_2O_5 / Sr_7Nb_（13）O_（36）层压膜是千兆位存储电容器的解决方案。

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  • 来源
    《Japanese journal of applied physics》 |2009年第7issue1期|071401.1-071401.8|共8页
  • 作者

    Masaki Yamato; Hikaru Hara; Takamaro Kikkawa;

  • 作者单位

    Research Center for Nanodevice and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan;

    Research Center for Nanodevice and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan;

    Research Center for Nanodevice and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527, Japan;

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