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首页> 外文期刊>Japanese journal of applied physics >Characteristics of Undoped and Mn-Doped BiFeO_3 Films Formed on Pt and SrRuO_3/Pt Electrodes by Radio-Frequency Sputtering
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Characteristics of Undoped and Mn-Doped BiFeO_3 Films Formed on Pt and SrRuO_3/Pt Electrodes by Radio-Frequency Sputtering

机译：通过射频溅射在Pt和SrRuO_3 / Pt电极上形成的未掺杂和Mn掺杂的BiFeO_3薄膜的特性

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摘要

Pure BiFeO_3 (BFO) and Mn-doped BiFeO_3 (BFMO) films were deposited at 550℃ on Pt(111) and SrRuO_3(SRO)/Pt(111) bottom electrodes using radio-frequency (RF) sputtering. Mn doping of 5 at. % into BFO films was effective in reducing leakage current density at a high electric field. In polarization versus electric field (P-E) measurement at 100 kHz, square hysteresis loops were obtained at room temperature in both BFO and BFMO films on Pt and SRO/Pt electrodes. In the BFMO films, the frequency dependence of the remanent polarization was not pronounced, even when the measurement frequency was decreased to 5 kHz. In the BFO film, on the other hand, no accurate hysteresis loops could be measured at a frequency below 10 kHz, because of the large leakage current.
机译：在550℃下，使用射频（RF）溅射在Pt（111）和SrRuO_3（SRO）/ Pt（111）底部电极上沉​​积纯BiFeO_3（BFO）和Mn掺杂的BiFeO_3（BFMO）膜。锰掺杂量为5 at。在BFO膜中的％的添加对降低高电场下的漏电流密度是有效的。在100 kHz下极化与电场（P-E）的测量中，室温下在Pt和SRO / Pt电极上的BFO和BFMO膜中均获得了方形磁滞回线。在BFMO膜中，即使当测量频率降低到5 kHz时，剩余极化的频率依赖性也没有显着。另一方面，在BFO膜中，由于泄漏电流大，因此无法在10 kHz以下的频率下测量出准确的磁滞回线。

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  • 来源
    《Japanese journal of applied physics》 |2009年第9issue2期|09KB02.1-09KB02.4|共4页
  • 作者

    Jeong Hwan Kim; Hiroshi Funakubo; Yoshihiro Sugiyama; Hiroshi Ishiwara;

  • 作者单位

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan Fujitsu Laboratories Ltd., 10-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0197, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

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