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Microstructure and Phase Transition of MnO_2-Doped Bismuth Layered-Structure Ferroelectrics

机译:MnO_2掺杂铋层状铁电体的微观结构和相变

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摘要

The effects of MnO_2 doping on the microstruclure and phase transition of ferroelectric CaBi_4Ti_4O_(15) (CBT) ceramics with x mol% of MnO_2 (CBT-xM; x = 0,1,3) have been studied. The single-phase crystal structure and the plate-like grain morphology are clearly observed for all compositions, while extended grains are observed with x = 3. The dielectric permittivity and dielectric loss show that the Mn~(2+) and Mn~(3+) ions are preferentially incorporated into the A- and B-sites, respectively, up to a limiting extent of approximately x = 2. The ac conductivity decreases and the activation energy increases with increasing Mn content owing to the decrease in the number of conducting carriers and increase in covatence, respectively. The Curie temperature T_c is independent of MnO_2 doping within the experimental accuracy, and the dielectric constant satisfies the Curie-Weiss law above T_c. The temperature dependence of the soft mode with x = 0 and 1 shows a significant softening towards T_1 ~ T_c + 113℃ (at T_1, the square of the soft mode frequency ω_s~2 → 0). ω_s~2 is approximately proportional to t _ t_1, . These findinas indicate that the disolacive nature of the phase transition is not affected by MnO_2 dopinq, at least below x = 3.
机译:研究了MnO_2掺杂对xmol%MnO_2(CBT-xM; x = 0,1,3)的铁电CaBi_4Ti_4O_(15)(CBT)陶瓷的微结构和相变的影响。所有组成均清楚地观察到单相晶体结构和板状晶粒形态,而x = 3时观察到延伸晶粒。介电常数和介电损耗表明Mn〜(2+)和Mn〜(3 +)离子分别优先进入A和B位置,直至大约x = 2的极限程度。由于导电量的减少,交流电导率降低,活化能随Mn含量的增加而增加携带者和增加的容忍度。在实验精度范围内,居里温度T_c与MnO_2掺杂无关,介电常数满足T_c以上的居里-魏斯定律。 x = 0和1时,软模式的温度依赖性显示出朝着T_1〜T_c + 113℃显着软化(在T_1时,软模式频率ω_s〜2→0的平方)。 ω_s〜2大约与t _ t_1,...成正比。这些发现表明,MnO_2 dopinq至少在x = 3以下不影响相变的不溶性。

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  • 来源
    《Japanese journal of applied physics》 |2009年第9issue2期|09KC10.1-09KC10.5|共5页
  • 作者单位

    Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

    Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

    Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

    Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;

    Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;

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