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首页> 外文期刊>Japanese journal of applied physics >Dependence Of Effective Work Function Modulation With Phosphorous Segregation On Ni To Si Ratio In Ni Silicide/sio_2 Systems
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Dependence Of Effective Work Function Modulation With Phosphorous Segregation On Ni To Si Ratio In Ni Silicide/sio_2 Systems

机译：硅离析/ sio2体系中磷偏析有效功函数对Ni / Si比的依赖性

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摘要

The effect of Ni to Si ratio on effective work function (Φ_(eff)) modulation with phosphorus (P) segregation at the Ni silicide/ SiO_2 interface was systematically investigated. To discriminate the P segregation effect from other parasitic possibilities of Φ_(eff) modulation, which are changes in Ni-Si ratio and crystallinity including crystal grain orientation near the interface, we applied a P post-doping process for Ni_2Si (Ni_3Si_2)/SiO_2, NiSi/SiO_2, and NiSi_2/SiO_2 systems. In the post-doping process, P atoms were segregated to the Ni silicide/SiO_2 interface after Ni silicide gate formation; hence, independent control of a desired interface P density can be realized. In addition, we newly developed a thin Ti-inserted NiSi_2 formation process, by which NiSi_2 can be formed at a temperature as low as 450 ℃, thus revealing the P-segregated Φ_(eff) modulation effect at the NiSi_2/SiO_2 interface for the first time. As a result, the largest Φ_(eff) modulation (ΔΦ_(eff) = -0.45 eV) occurs at the P-segregated NiSi_2/SiO_2 interface, and a Φ_(eff) of near the Si conduction band edge (4.13 ± 0.04eV) was realized, although the obtained Φ_(eff) values with P segregation at Ni_2Si (Ni_3Si_2)/SiO_2 and NiSi/SiO_2 were 4.38 ± 0.01 eV (ΔΦ_(eff) = -0.32 eV) and 4.37 ±0.01 eV (ΔΦ_(eff) = -0.29eV) for the same P dose, respectively. Moreover, we found that ΔΦ_(eff) at the NiSi_2/SiO_2 interface is larger than those at the NiSi/SiO_2 and the Ni_2Si (Ni_3Si_2)/SiO_2 interfaces, even when the segregated P densities are the same. These results can be explained by an increase in the density of effective interface dipole for Φ_(eff) modulation at a high-Si-content interface.
机译：系统地研究了镍硅比对硅化镍/ SiO_2界面上磷（P）偏析的有效功函数（Φ_（eff））调制的影响。为了将P偏析效应与Φ_（eff）调制的其他寄生可能性（即界面附近的晶粒取向的Ni-Si比和结晶度的变化）区分开来，我们对Ni_2Si（Ni_3Si_2）/ SiO_2应用了P后掺杂工艺，NiSi / SiO_2和NiSi_2 / SiO_2体系。在后掺杂过程中，在形成硅化镍栅极之后，P原子偏析到硅化镍/ SiO_2界面上。因此，可以实现对期望的界面P密度的独立控制。此外，我们新开发了一种薄的插入Ti的NiSi_2形成工艺，通过该工艺可以在低至450℃的温度下形成NiSi_2，从而揭示了NiSi_2 / SiO_2界面上P偏析的Φ_（eff）调制效应。第一次。结果，最大的Φ_（eff）调制（ΔΦ_（eff）= -0.45 eV）发生在P偏析的NiSi_2 / SiO_2界面处，并且Φ_（eff）接近Si导带边缘（4.13±0.04eV）尽管在Ni_2Si（Ni_3Si_2）/ SiO_2和NiSi / SiO_2处具有P偏析的Φ_（eff）值为4.38±0.01 eV（ΔΦ_（eff）= -0.32 eV）和4.37±0.01 eV（ΔΦ_（eff ）= -0.29eV）分别针对相同的P剂量。此外，我们发现即使分离的P密度相同，NiSi_2 / SiO_2界面处的ΔΦ_（eff）也比NiSi / SiO_2和Ni_2Si（Ni_3Si_2）/ SiO_2界面处的ΔΦ_（eff）大。这些结果可以通过增加高Si含量界面上Φ_（eff）调制的有效界面偶极子的密度来解释。

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