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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH_4)_2S Treatment
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Low-Dark-Current Heterojunction Phototransistors with Long-Term Stable Passivation Induced by Neutralized (NH_4)_2S Treatment

机译：中和（NH_4）_2S处理引起的具有长期稳定钝化作用的低暗电流异质结光电晶体管

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摘要

To investigate the effects of surface leakage on the temperature-dependent dark and optical performance of a heterojunction phototransistor (HPT), three sets of HPTs were prepared. They were unpassivated (HPT A), passivated with diluted (NH_4)_2S (HPT B), and passivated with neutralized (NH_4)_2S (HPT C). Passivation treatment successfully suppresses surface-defect-induced effects. The passivated HPTs exhibit a reduced dark current and an enhanced signal-to-noise ratio (SNR). HPT A exhibits a room-temperature collector dark current (ICdark) of 0.59 nA at a Vce of 1 V, while those of HPTs B and C are 0.03 and 0.89pA, respectively. The room-temperature SNR values for HPTs A, B, and C at a P_in of 8.3 (107.6) nW are 5.9 (42), 59 (91), and 91 (122) dB, respectively. After a three-week air exposure, the room-perature SNR at a Pm of 107.6nW decreases to 25 (67) dB for HPT A (B), while it is 116dB for HPT C. The decrease for HPT C is only 6dB. A long-term stable passivation with good thermal stability has been achieved by neutralized (NH_4)_2S treatment.
机译：为了研究表面泄漏对异质结光电晶体管（HPT）的温度依赖性暗和光学性能的影响，制备了三套HPT。将其未钝化（HPT A），用稀释的（NH_4）_2S（HPT B）钝化，然后用中和的（NH_4）_2S（HPT C）钝化。钝化处理可成功抑制表面缺陷引起的影响。钝化的HPT表现出降低的暗电流和增强的信噪比（SNR）。 HPT A在1 V的Vce处表现出0.59 nA的室温集电极暗电流（ICdark），而HPT B和C的室温集电极暗电流分别为0.03和0.89pA。 HPT A，B和C的室温SNR值在P_in为8.3（107.6）nW时分别为5.9（42），59（91）和91（122）dB。经过三周的空气暴露后，HPT A（B）在Pm为107.6nW时的房间SNR降低至25（67）dB，而HPT C为116dB。HPTC的降低仅为6dB。通过中和（NH_4）_2S处理，可以实现具有良好热稳定性的长期稳定钝化。

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