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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Electron Backscatter Diffraction Analysis for Polarization of SrBi_2(Ta,Nb)_2O_9 Ferroelectric Capacitors in Submicron Small Area
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Electron Backscatter Diffraction Analysis for Polarization of SrBi_2(Ta,Nb)_2O_9 Ferroelectric Capacitors in Submicron Small Area

机译：亚微米小区域SrBi_2（Ta，Nb）_2O_9铁电电容器极化的电子背散射衍射分析

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摘要

We investigate the size and crystal orientation of each small grain of ferroelectric SrBi_2(Ta,Nb)_2O_9 (SBTN) films within very small areas by an electron backscatter diffraction (EBSD) analysis technique. The obtained map of the grains reveals that the size of c-axis-oriented grains increases as the average grain size of the films increases. On the other hand, the size of a-axis-oriented grains, each of which has a finite remnant polarization normal to the films, is almost unchanged. The area fraction of the a-axis-oriented grains is in good agreement with the measured polarizations of ferroelectric capacitors with different average grain sizes. This result implies that an increase in the number of relatively small a-axis-oriented grains is effective for increasing the total polarization of the ferroelectric films. The demonstrated analysis technique is very useful for the precise design of future high-density ferroelectric random access memories (FeRAMs) with very small capacitor structures, each of which consists of only a few grains.
机译：我们通过电子背散射衍射（EBSD）分析技术研究了非常小的区域内铁电SrBi_2（Ta，Nb）_2O_9（SBTN）膜的每个小晶粒的尺寸和晶体取向。所获得的晶粒图表明，随着膜的平均晶粒尺寸的增加，c轴取向晶粒的尺寸增加。另一方面，每个a轴取向晶粒的尺寸几乎不变，每个晶粒的垂直于薄膜的方向都具有有限的剩余极化。 a轴取向晶粒的面积分数与具有不同平均晶粒尺寸的铁电电容器的极化测量值非常一致。该结果表明，增加相对小的a轴取向晶粒的数量对于增加铁电膜的总极化是有效的。演示的分析技术对于精确设计具有非常小的电容器结构的未来高密度铁电随机存取存储器（FeRAM）很有用，每个电容器仅由几个晶粒组成。

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