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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Decreasing Dark Current of Complementary Metal Oxide Semiconductor Image Sensors by New Postmetallization Annealing and Ultraviolet Curing
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Decreasing Dark Current of Complementary Metal Oxide Semiconductor Image Sensors by New Postmetallization Annealing and Ultraviolet Curing

机译：通过新的后金属化退火和紫外线固化来减少互补金属氧化物半导体图像传感器的暗电流

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摘要

We demonstrate a new postmetallization annealing and ultraviolet (UV) treatment process for reducing the dark current of image sensors. The new method utilizes a large amount of hydrogen in a plasma-silicon nitride film (p-SiN_x) as a hydrogen diffusion source. Through charge pumping measurement, it is proved that this method effectively reduces the interface trap density of pixel transistors, thereby decreasing the dark current of image sensors. Although the postetch process for removing p-SiN_x films induces plasma damage during the etch step, the damage can be effectively cured by the subsequent UV annealing.
机译：我们展示了一种新的金属化后退火和紫外线（UV）处理工艺，可减少图像传感器的暗电流。该新方法利用等离子体氮化硅膜（p-SiN_x）中的大量氢作为氢扩散源。通过电荷泵浦测量，证明该方法有效降低了像素晶体管的界面陷阱密度，从而降低了图像传感器的暗电流。尽管用于去除p-SiN_x膜的后蚀刻工艺会在蚀刻步骤中引起等离子体损伤，但是可以通过后续的UV退火有效地修复损伤。

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