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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >A Wide Dynamic Range Photogate-Type Active Pixel Sensor Using a Self-Regulation Principle
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A Wide Dynamic Range Photogate-Type Active Pixel Sensor Using a Self-Regulation Principle

机译:利用自调节原理的宽动态范围光电门型有源像素传感器

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摘要

A wide dynamic range photogate-type active pixel image sensor based on a self-regulation principle is reported. A 5 x 5 element prototype sensor was fabricated using a 5 μm single-poly, single-metal negative channel metal oxide semiconductor (NMOS) silicon integrated circuit technology. The key techniques are based on the feedback of a floating diffusion (FD) potential to the photogate applied voltage and on the control of the sub-threshold characteristic of the photogate using an ion implantation process. The proposed sensor makes it possible to automatically adjust the sensitivity of each pixel using only three transistors. The conversion of the irradiated light to the output voltage is linear under low-light conditions, while it is nonlinear under bright light. The photo-electric conversion characteristics are similar to those of a linear-logarithmic image sensor. The dynamic range can be expanded without the need for an additional capacitor, an analog-to-digital (A/D) converter or any complex circuitry. Compared with a conventional photogate-type image sensor that was fabricated on the same chip, the dynamic range was expanded by 28dB.
机译:报道了基于自调节原理的宽动态范围光电门型有源像素图像传感器。使用5μm单多晶硅单金属负沟道金属氧化物半导体(NMOS)硅集成电路技术制造了5 x 5元素的原型传感器。关键技术基于浮动扩散(FD)电位对光电栅极施加电压的反馈以及基于使用离子注入工艺的光电栅极亚阈值特性的控制。提出的传感器使得仅使用三个晶体管就可以自动调整每个像素的灵敏度。在弱光条件下,辐射光到输出电压的转换是线性的,而在强光条件下则是非线性的。光电转换特性类似于线性对数图像传感器的光电转换特性。动态范围可以扩展,而无需额外的电容器,模数(A / D)转换器或任何复杂的电路。与在同一芯片上制造的传统光电门型图像传感器相比,动态范围扩大了28dB。

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