Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH_4/CH_4/H_2 at Various Substrate Temperatures

Akimori Tabata; Yusuke Komura; Yoshiki Hoshide; Tomoki Narita; Akihiro Kondo

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Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH_4/CH_4/H_2 at Various Substrate Temperatures

机译：SiH_4 / CH_4 / H_2在不同衬底温度下通过热线化学气相沉积制备的纳米晶立方碳化硅薄膜的性能

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摘要

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH_4/CH_4/H_2 gases, and the influence of substrate temperature, T_s (104 < T_s < 434 °C), on the properties of the SiC thin films was investigated. X-ray diffraction patterns and Raman scattering spectra revealed that nanocrystalline cubic SiC (nc-3C-SiC) films grew at T_s above 187°C, while completely amorphous films grew at T_s = 104°C. Fourier transform infrared absorption spectra revealed that the crystallinity of the nc-3C-SiC was improved with increasing T_s up to 282 °C and remained almost unchanged with a further increase in T_s from 282 to 434 °C. The spin density was reduced monotonically with increasing T_s.

机译：通过热线化学气相沉积从SiH_4 / CH_4 / H_2气体制备碳化硅（SiC）薄膜，以及衬底温度T_s（104

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《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2008年第1issue2期|p.561-565|共5页
作者
Akimori Tabata; Yusuke Komura; Yoshiki Hoshide; Tomoki Narita; Akihiro Kondo;
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中图分类应用物理学;
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1. Highly conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared with a hot-wire chemical vapor deposition from SiH_4/CH_4/H_2/N_2 gas [J] . Akimori Tabata, Yoshiki Hoshide, Akihiro Kondo Materials Science and Engineering . 2010,第3期

机译：用SiH_4 / CH_4 / H_2 / N_2气体通过热线化学气相沉积法制备的高导电氮掺杂氢化纳米晶立方碳化硅薄膜
2. Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH_4/CH_4/H_2 [J] . Akimori Tabata, Yusuke Komura, Tomoki Narita, Thin Solid Films . 2009,第12期

机译：通过SiH_4 / CH_4 / H_2热线化学气相沉积法生长碳化硅薄膜
3. Nanocrystalline cubic silicon carbide films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H-2 at a low substrate temperature [J] . Komura Y, Tabata A, Narita T, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2006,第9a20期

机译：通过在低衬底温度下使用SiH4 / CH4 / H-2热线化学气相沉积制备的纳米晶立方碳化硅膜
4. Influences of N_2 and H_2 gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition [C] . Akimori Tabata, Yoshiki Hoshide, Akihiro Kondo EuroCVD 17/CVD 17 . 2009

机译：N_2和H_2气体流量对热线化学气相沉积制备n型纳米晶3C-SiC：H薄膜性能的影响
5. Low temperature thin film silicon solar cells prepared by hot-wire chemical vapor deposition [D] . Adachi, Michael M. 2007

机译：通过热线化学气相沉积制备的低温薄膜硅太阳能电池
6. Effect of deposition temperature on the structural and optical properties of chemically prepared nanocrystalline lead selenide thin films [O] . Anayara Begum, Amir Hussain, Atowar Rahman 2012

机译：沉积温度对化学制备纳米晶硒化铅薄膜的结构和光学性能的影响
7. Low substrate temperature deposition of amorphous and microcrystalline silicon films on plastic substrates by hot-wire chemical vapor deposition [O] . Alpuim P., Chu V., Conde J. P. 2000

机译：通过热线化学气相沉积在塑料衬底上低温度沉积非晶和微晶硅膜
8. Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition [R] . Moutinho, H. R., Jiang, C. S., Nelson, B., 2003

机译：衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响

Properties of Nanocrystalline Cubic Silicon Carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH_4/CH_4/H_2 at Various Substrate Temperatures

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