On the Characteristics and Spatial Dependence of Channel Thermal Noise in Nanoscale Metal-Oixde-Semiconductor Field Effect Transistors

Jongwook Jeon; Yeonam Yun; Junsoo Kim; Byung-Gook Park; Jong Duk Lee; Hyungcheol Shin

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On the Characteristics and Spatial Dependence of Channel Thermal Noise in Nanoscale Metal-Oixde-Semiconductor Field Effect Transistors

机译：纳米金属氧化物半导体场效应晶体管沟道热噪声的特性和空间依赖性

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The physical origin of the channel thermal noise in nanoscale RF metal-oxide-semiconductor field effect transistors (MOSFETs) is characterized based on an analytical noise model, which takes into account velocity saturation, channel length modulation, and

机译：纳米级射频金属氧化物半导体场效应晶体管（MOSFET）中通道热噪声的物理起源基于分析噪声模型进行了表征，该模型考虑了速度饱和，通道长度调制和

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《Japanese journal of applied physics》 |2008年第4issue2期|2636-2640|共5页
作者
Jongwook Jeon; Yeonam Yun; Junsoo Kim; Byung-Gook Park; Jong Duk Lee; Hyungcheol Shin;
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正文语种 eng
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RF MOSFETs; channel thermal noise; impedance field method; short channel effect; analytical noise model;

机译：射频MOSFET;通道热噪声;阻抗场法短通道效应;分析噪声模型;

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专利

1. Dependence of Hot Carrier Reliability and Low Frequency Noise on Channel Stress in Nanoscale n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Hyuk-Min Kwon, Jung-Deuk Bok, In-Shik Han, Japanese journal of applied physics . 2011,第10Issue2期

机译：热载流子可靠性和低频噪声对纳米级n沟道金属氧化物半导体场效应晶体管中沟道应力的依赖性
2. Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths [J] . Ahmed Sheikh, Shawkat Mashiyat, Chowdhury Md. Iramul, Micro & Nano Letters, IET . 2015,第10期

机译：栅介电材料对不同沟道长度的弹道肖特基势垒石墨烯纳米带场效应晶体管和碳纳米管场效应晶体管电流-电压特性的依赖性
3. Dependences of Short-Channel Effect on Doping Profiles for Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistor [J] . Chun-Hsing Shih, Chenhsin Lien Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第5A期

机译：短沟道效应对纳米级金属氧化物半导体场效应晶体管掺杂分布的影响
4. 1/f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area [C] . Guanxiong Liu, Sergey Rumyantsev, William Stillman, Symposium on functional two-dimensional layered materials-from graphene to topological insulators . 2012

机译：石墨烯场效应晶体管中的1 / f噪声：依赖于设备通道区域
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Temperature dependence of 1∕f noise mechanisms in silicon nanowire biochemical field effect transistors [O] . Nitin K. Rajan, David A. Routenberg, Jin Chen, -1

机译：硅纳米线生化场效应晶体管中1 ∕ f噪声机制的温度依赖性
7. A Unified Channel Thermal Noise Model for Short Channel MOS Transistors [O] . Sang Dae Yu 2013

机译：短通道MOS晶体管的统一信道热噪声模型
8. The Current-Voltage Characteristics of Field-Effect Transistors with Short Channels. [R] . Hess, K., Dorda, G., Sah, C. T. 1975

机译：短沟道场效应晶体管的电流 - 电压特性。

On the Characteristics and Spatial Dependence of Channel Thermal Noise in Nanoscale Metal-Oixde-Semiconductor Field Effect Transistors

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