Tungsten Through-Silicon Via Technology for Three-Dimensional LSIs

Hirokazu Kikuchi; Yusuke Yamada; Atif Mossad Ali; Jun Liang; Takafumi Fukushima; Tetsu Tanaka; Mitsumasa Koyanagi

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Tungsten Through-Silicon Via Technology for Three-Dimensional LSIs

机译：三维LSI的钨通硅通孔技术

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Tungsten through-silicon via (W-TSV) technology is investigated for the fabrication of three-dimensional (3D) LSI chips having low-resistive TSVs with a width less than 3 μm. In our 3D integration technology, completed two-dimensional (2D) LSI chips inclu

机译：研究了钨穿硅通孔（W-TSV）技术用于制造具有小于3μm宽度的低电阻TSV的三维（3D）LSI芯片。在我们的3D集成技术中，完整的二维（2D）LSI芯片包括

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来源
《Japanese journal of applied physics》 |2008年第4issue2期|2801-2806|共6页
作者
Hirokazu Kikuchi; Yusuke Yamada; Atif Mossad Ali; Jun Liang; Takafumi Fukushima; Tetsu Tanaka; Mitsumasa Koyanagi;
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正文语种 eng
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three-dimensional integration technology; through-silicon via (TSV); deep-trench etching,; sub-atmospheric chemical vapor deposition; time-modulated CVD method;

机译：三维整合技术;硅通孔（TSV）;深沟槽蚀刻;低于大气的化学气相沉积;时间调制CVD法;

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专利

1. Through-Silicon Photonic Via and Unidirectional Coupler for High-Speed Data Transmission in Optoelectronic Three-Dimensional LSI [J] . Noriki A., Lee K., Bea J., Electron Device Letters, IEEE . 2012,第2期

机译：硅光子通孔和单向耦合器，用于光电三维LSI中的高速数据传输
2. Evaluation of Cu Diffusion From Cu Through-Silicon Via (TSV) in Three-Dimensional LSI by Transient Capacitance Measurement [J] . Bea J., Lee K., Fukushima T., Electron Device Letters, IEEE . 2011,第7期

机译：瞬态电容测量评估三维大规模集成电路中铜从硅穿通孔（TSV）中的铜扩散
3. Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV) [J] . Wen-Wei Shen, Kuan-Neng Chen Nanoscale Research Letters . 2017,第1期

机译：三维集成电路（3D IC）关键技术：硅通孔（TSV）
4. A 300-mm Wafer-Level Three-Dimensional Integration Scheme Using Tungsten Through-Silicon Via and Hybrid Cu-Adhesive Bonding [C] . F. Liu, R. R. Yu, A. M. Young, International Electron Devices Meeting . 2008

机译：300mm晶圆级三维集成方案，通过钨通过硅通孔和杂交Cu粘合剂粘合
5. Through-Silicon Via (TSV) Related Noise Coupling in Three-Dimensional (3-D) Integrated Circuits (ICs). [D] . Asgari, Mohammad Hosein. 2011

机译：三维（3-D）集成电路（IC）中的硅通孔（TSV）相关噪声耦合。
6. Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV) [O] . Wen-Wei Shen, Kuan-Neng Chen 2017

机译：三维集成电路（3D IC）关键技术：硅通孔（TSV）
7. A 300-mm Wafer-Level Three-Dimensional Integration Scheme Using Tungsten Through-Silicon Via and Hybrid Cu-Adhesive Bonding [O] . K. A. Kelly, S. Purushothaman, S. J. Koester, 2014

机译：采用钨硅通孔和混合铜粘合剂粘合的300毫米晶圆级三维集成方案
8. Toshiba Review, Vol. 44, No. 7, 1989. Special Issues: Optical Communications Technology; Mircocomputer LSI (Large Scale Integrated) Technology [R] . 1989

机译：东芝评论，卷。 44，第7期，1989年。特刊：光通信技术; mircocomputer LsI（大规模集成）技术

Tungsten Through-Silicon Via Technology for Three-Dimensional LSIs

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