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首页> 外文期刊>Japanese journal of applied physics >Resonant Tunneling Diodes For Sub-terahertz And Terahertz Oscillators
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Resonant Tunneling Diodes For Sub-terahertz And Terahertz Oscillators

机译：亚太赫兹和太赫兹振荡器的谐振隧穿二极管

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摘要

Resonant tunneling diodes (RTDs) have the potential for use as compact and coherent terahertz (THz) sources operating at room temperature. In this paper, sub-THz and THz oscillators with RTDs integrated on planar circuits are described. Fundamental oscillation up to 0.65 THz and harmonic oscillation up to 1.02THz were obtained at room temperature in our recent study. Limiting factors for oscillation frequency and output power are theoretically analyzed including tunneling and transit-time effects and parasitic elements. Oscillation frequency and its dependence on RTD size are in good agreement with the measured results. Based on this result, it is shown that fundamental oscillation up to 2.3 THz and an output power of 60 μW at 1 THz are theoretically expected by improving the structures of the RTD and the antenna. Voltage-controlled oscillation, which is useful for the precise control of frequency, is observed in the RTD oscillators. Coherent power combining in an array configuration to achieve high output power as well as mutual injection locking between the array elements are also described.
机译：谐振隧穿二极管（RTD）有潜力用作在室温下工作的紧凑且相干的太赫兹（THz）源。在本文中，描述了在平面电路上集成了RTD的次THz和THz振荡器。在我们最近的研究中，在室温下获得了高达0.65 THz的基本振荡和高达1.02THz的谐波振荡。理论上分析了振荡频率和输出功率的限制因素，包括隧道效应和渡越时间效应以及寄生因素。振荡频率及其对RTD尺寸的依赖性与测量结果非常吻合。根据该结果，可以看出，通过改善RTD和天线的结构，理论上期望达到2.3 THz的基本振荡和1 THz的60μW输出功率。在RTD振荡器中观察到压控振荡，对精确控制频率很有用。还描述了在阵列配置中相干功率组合以实现高输出功率以及阵列元件之间的相互注入锁定。

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