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首页> 外文期刊>Japanese journal of applied physics >Design Of Bulk Fin-type Field-effect Transistor Considering Gate Work-function
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Design Of Bulk Fin-type Field-effect Transistor Considering Gate Work-function

机译：考虑栅极功函数的大体积鳍式场效应晶体管设计

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摘要

We proposed a new body-tied triple-gate fin-type field-effect transistor (bulk FinFET) which has different gate work-functions on the top- and side-channel regions. The effect of gate work-function on the characteristics of the bulk FinFETs was studied by using three-dimensional device simulator. By increasing the top-gate work-function (Φ_(TG)) at a fixed side-gate work-function (Φ_(SG)) of the bulk FinFET, threshold voltage (V_(th)) increases and off-state leakage current (I_(off)) reduces significantly without increasing doping concentration of the fin body. The bulk FinFETs with the low body doping and the threshold voltage controlled by midgap-gate work-function shown very small dependence on the corner shape, but shown very poor short channel effect (SCE). It was also shown that devices with the V_(th) controlled by body doping shows significant corner effect and the effect becomes small as the fin width decreases. By applying our approach, we could reduce the off-current by more than 10 times without increasing fin body doping concentration.
机译：我们提出了一种新的体联三栅鳍式场效应晶体管（体FinFET），该晶体管在顶沟道区和侧沟道区具有不同的栅极功函数。利用三维器件仿真器研究了栅极功函数对体FinFET的特性的影响。通过在整体FinFET的固定侧栅极功函数（Φ_（SG））处增加顶栅极功函数（Φ_（TG）），阈值电压（V_（th））增大，并且关态漏电流（I_（off））显着降低而不增加鳍片主体的掺杂浓度。具有低主体掺杂和由中能隙栅功函数控制的阈值电压的体FinFET显示出对拐角形状的依赖性很小，但显示出的短沟道效应（SCE）非常差。还表明，受主体掺杂控制的V_（th）器件显示出明显的拐角效应，并且随着鳍宽度的减小，该效应变小。通过应用我们的方法，我们可以在不增加鳍片主体掺杂浓度的情况下将截止电流降低10倍以上。

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