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首页> 外文期刊>Japanese journal of applied physics >Preparation Of Sns Films By Sulfurization Of Sn Sheet
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Preparation Of Sns Films By Sulfurization Of Sn Sheet

机译:锡板硫化制备锡膜

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摘要

Tin sulfide (SnS) films were grown by sulfurization using an inexpensive Sn sheet and S powder. The Sn sheet was sulfurized in a closed ampoule at a low temperature between 150 and 300 ℃,The resulting sulfurized films had a flat surface and large grains, and exhibited adhered very well to the substrate. These samples exhibited X-ray diffraction peaks corresponding to SnS and contained no extra phases. These results represent the first step toward realizing an optical device such as a solar cell using a SnS film grown by a sulfurization method.
机译:硫化锡(SnS)膜是通过使用便宜的锡板和S粉末进行硫化来生长的。将锡片在密闭的安瓿瓶中于150至300℃之间进行低温硫化,所得硫化膜表面平坦,晶粒大,并且与基材的粘附性很好。这些样品表现出对应于SnS的X射线衍射峰,并且不包含额外的相。这些结果代表了使用通过硫化方法生长的SnS膜实现光学器件(例如太阳能电池)的第一步。

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