Acceptorlike Behavior Of Defects In Sige Alloys Grown By Molecular Beam Epitaxy

Motoki Satoh; Keisuke Arimoto; Kiyokazu Nakagawa; Shinji Koh; Kentarou Sawano; Yasuhiro Shiraki; Noritaka Usami; Kazuo Nakajima

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Acceptorlike Behavior Of Defects In Sige Alloys Grown By Molecular Beam Epitaxy

机译：分子束外延生长的Sige合金中缺陷的受体样行为

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The Ge composition dependence of the densities and energy levels of the acceptorlike defect states that are generated during the solid-source molecular beam epitaxy (SSMBE) of SiGe films was investigated. Hall measurements in a wide temperature range were carried out, and a previously unreported very shallow acceptorlike state was found. We provide evidence that the observed acceptorlike states are relevant to intrinsic point defects.

机译：研究了在SiGe薄膜的固体源分子束外延（SSMBE）期间产生的受体样缺陷态的密度和能级的Ge组成依赖性。在宽温度范围内进行了霍尔测量，发现了以前未报道的非常浅的受体样状态。我们提供证据表明观察到的受体样态与内在点缺陷有关。

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来源
《Japanese journal of applied physics》 |2008年第6isser1期|4630-4633|共4页
作者
Motoki Satoh; Keisuke Arimoto; Kiyokazu Nakagawa; Shinji Koh; Kentarou Sawano; Yasuhiro Shiraki; Noritaka Usami; Kazuo Nakajima;
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正文语种 eng
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sige; molecular beam epitaxy; hall measurements; defect;

机译：尺寸;分子束外延;霍尔测量;缺陷;

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专利

1. Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy [J] . A. Armstrong, C. Poblenz, D. S. Green, Applied Physics Letters . 2006,第8期

机译：衬底温度对掺入碳相关缺陷的影响以及分子束外延生长GaN中半绝缘行为的机理
2. Formation behavior of BexZn1-xO alloys grown by plasma-assisted molecular beam epitaxy [J] . Chen Mingming, Zhu Yuan, Su Longxing, Applied Physics Letters . 2013,第20期

机译：等离子体辅助分子束外延生长BexZn1-xO合金的形成行为
3. Formation behavior of Be_xZn_(1-x) O alloys grown by plasma-assisted molecular beam epitaxy [J] . Mingming Chen, Yuan Zhu, Longxing Su, Applied Physics Letters . 2013,第20期

机译：等离子体辅助分子束外延生长Be_xZn_（1-x）O合金的形成行为
4. The Role of Non-Radiatie defects in Thermal Quenching of luminescence in SiGe/Si Sturcutures Grown by Molecular Beam Epitaxy [C] . I.A.Buyanova, W.M.Chen, G.Pozian, International conference on defects in semiconductors;ICDS-19 . 1997

机译：非辐射缺陷在分子束外延生长的SiGe / Si结构中的发光热猝灭中的作用
5. Growth Parameter Dependence and Correlation of Native Point Defects and Dielectric Properties in BaxSr1-xTiO 3 Grown by Molecular Beam Epitaxy. [D] . Rutkowski, Mitchell Myron. 2013

机译：分子束外延生长BaxSr1-xTiO 3的生长参数依赖性和本征点缺陷与介电性能的相关性。
6. Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties [O] . Łukasz Gelczuk, Jan Kopaczek, Thomas B. O. Rockett, -1

机译：分子束外延在低温下生长的n型GaAsBi合金的深层缺陷及其对光学性能的影响
7. Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties [O] . Gelczuk Ł., Kopaczek J., Rockett T.B.O., 2017

机译：n型GaasBi合金在低温下通过分子束外延生长的深层缺陷及其对光学性能的影响
8. Surface Processes in Gas Source Molecular Beam Epitaxy of Si and SiGe Alloys(Oppervlakte Processen in Gas Bron Moleculaire Bundel Epitaxie van Si en SiGe Legeringen) [R] . Werner, K. P. 1996

机译：si和siGe合金的气源分子束外延中的表面过程（Gas Bron moleculaire Bundel Epitaxie van si en siGe Legeringen中的Oppervlakte processen）

Acceptorlike Behavior Of Defects In Sige Alloys Grown By Molecular Beam Epitaxy

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