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首页> 外文期刊>Japanese journal of applied physics >Relationship between Oxide-Ion Conduction and Dielectric Properties of Gd_2Zr_2O_7 Having a Fluorite-Type Structure
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Relationship between Oxide-Ion Conduction and Dielectric Properties of Gd_2Zr_2O_7 Having a Fluorite-Type Structure

机译:具有萤石型结构的Gd_2Zr_2O_7的氧化物离子导电性与介电性能的关系

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摘要

The relationship between electrical conduction and dielectric properties was investigated for the oxide-ion conductor Gd_2Zr_2O_7 having a fluorite-type structure. Computer simulation clarified that the anomalously large dielectric constant (ε_r') was successfully explained by the superposition of the Debye-type polarization and the electrolyte-electrode interfacial polarization. Two Debye-type relaxations were observed at 673 K and above. The lower-frequency relaxation was ascribed to the dopant-vacancy associate, (Gd_(Ce)'-Vo~‥-Gd_(Ce)')> and the higher one to the long range migration of oxide ions on the basis of the discussions of both the activation energies and the relaxation frequencies. The frequency dependences of both the ac conductivity (σ_(ac)) and the loss tangent (tanδ) were also successfully explained using the dielectric parameters of the Debye-type dopant-vacancy associates.
机译:研究了具有萤石型结构的氧化物离子导体Gd_2Zr_2O_7的导电性与介电性能之间的关系。计算机仿真表明,异常大的介电常数(ε_r')可以通过德拜型极化和电解质-电极界面极化的叠加成功地解释。在673 K及更高温度下观察到两次德拜型弛豫。在讨论的基础上,低频弛豫归因于掺杂剂-空位缔合体(Gd_(Ce)'-Vo〜‥-Gd_(Ce)')>,而较高的弛豫归因于氧化物离子的长距离迁移活化能和弛豫频率交流电导率(σ_(ac))和损耗角正切(tanδ)的频率相关性也使用Debye型掺杂物-空位缔合体的介电参数成功解释了。

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