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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Properties and Lithographic Capability of Sulfonium Salts with Aromatic Cyclic Ketone Group for ArF Chemically Amplified Resist
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Properties and Lithographic Capability of Sulfonium Salts with Aromatic Cyclic Ketone Group for ArF Chemically Amplified Resist

机译：芳环酮基of盐的ArF化学增强抗蚀剂的性质和平版能力

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摘要

We evaluated dialkylsulfonium salts with an aromatic cyclic ketone structure (a 1-indanone, 1-tetralone, or 4-chromanone unit) as a photoacid generator for ArF chemically amplified resists. The thermal stability of the salts was affected by alkyl subsitituents. Sulfonium salts with two methyl groups or a pentamethylene group exhibited a decomposition temperature of more than 200℃. The absorption coefficients at 193 nm for the new PAGs were 1/3 to 1/4 that of the conventional triphenylsulfonium salt. The photosensitivity of sulfonium salt with the 1-oxo-2-indanyl group with an ArF laser was two times that of a phenacyl sulfonium salt with an aromatic linear ketone structure. We also analyzed the photodecomposed compounds produced by irradiation with an ArF excimer laser. A positive resist using a dimethyl(1-oxo-2-indanyl)sulfonium salt achieved a 130 nm line-and space pattern.
机译：我们评估了具有芳环酮结构（1-茚满酮，1-四酮或4-苯并蒽酮单元）的二烷基ulf盐，作为ArF化学放大型抗蚀剂的光酸产生剂。盐的热稳定性受烷基取代基的影响。具有两个甲基或五亚甲基的ulf盐表现出的分解温度超过200℃。新型PAG在193 nm处的吸收系数是常规三苯基ulf盐的1/3至1/4。用ArF激光对带有1-氧代-2-茚满基的sulf盐的光敏性是具有芳族线性酮结构的苯甲sulf盐的光敏性的两倍。我们还分析了用ArF准分子激光照射产生的光分解化合物。使用二甲基（1-氧代-2-茚满基）ulf盐制成的正型抗蚀剂可实现130 nm的线和间隔图案。

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