Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films

Ting ZHANG; Zhitang SONG; Bo LIU; Songlin FENG; Bomy CHEN

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Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films

机译：Si_xSb_2Te_3薄膜组成梯度相变的研究

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Compositional gradient phase change Si_xSb_2Te_3 film has been prepared and investigated. The Si_xSb_2Te_3 film has been found to lose its phase change property when silicon concentration exceeds 95 at. % according to current-voltage and X-ray diffraction measurements. Current-voltage performance also shows that, when x ≤ 7.5, threshold current decreases significantly with the increase of x. However, threshold power reaches its lowest point when x is about 1.7. Si_(1.7)Sb_2Te_3 film is found to possess an extremely low threshold power and a reasonable low threshold current. The SET and RESET currents of Si_(1.7)Sb_2Te_3 based chalcogenide random access memory cell with electrode contact of (0.26 μm)~2 are 0.26 and 1.1 mA, respectively, when pulse length is 100ns.

机译：制备并研究了成分梯度相变Si_xSb_2Te_3薄膜。当硅浓度超过95at时，发现Si_xSb_2Te_3膜失去其相变特性。％根据电流-电压和X射线衍射测量。电流电压性能还表明，当x≤7.5时，阈值电流会随着x的增加而显着降低。但是，当x约为1.7时，阈值功率达到其最低点。发现Si_（1.7）Sb_2Te_3膜具有极低的阈值功率和合理的低阈值电流。当脉冲长度为100ns时，具有（0.26μm）〜2电极接触的基于Si_（1.7）Sb_2Te_3的硫族化物随机存取存储单元的SET和RESET电流分别为0.26和1.1 mA。

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《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2007年第3期|p.L70-L73|共4页
作者
Ting ZHANG; Zhitang SONG; Bo LIU; Songlin FENG; Bomy CHEN;
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作者单位

Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
phase change; chalcogenide random access memory; compositional gradient; SiSbTe; chalcogenide material;

机译：相变硫属化物随机存取存储器组成梯度SiSbTe硫属化物;

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Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films

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