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首页> 外文期刊>Japanese journal of applied physics >Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase
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Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase

机译：非晶硅到微晶硅过渡相上制造的硅基薄膜太阳能电池的温度依赖性

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摘要

The temperature dependence of silicon (Si)-based thin-film single-junction solar cells, whose intrinsic absorbers were fabricated on the transition phase between hydrogenated amorphous silicon (a-Si:H) to hydrogenated microcrystalline silicon (μc-Si:H), was investigated. By varying the hydrogen dilution ratio, wide-band-gap protocrystalline silicon (pc-Si:H) and μc-Si:H absorber layers were obtained. Photo-current density-voltage (Photo-J-V) characteristics were measured under AM1.5 illumination at ambient temperatures in the range of 25-75 ℃. We found that the solar cells with pc-Si:H, which exists just below the a-Si:H to μc-Si:H transition boundary, showed the lowest temperature coefficient (TC) for conversion efficiency (η) and open-circuit voltage (V_(oc)). while the solar cells fabricated at the onset of the a-Si:H to μc-Si:H phase transition exhibited a relatively high TC for η and V_(oc). Experimental results indicated that pc-Si;H is a promising material for the absorber layer of the single junction or the top cell of tandem solar cells that operate in high temperature regions.
机译：基于硅（Si）的薄膜单结太阳能电池的温度依赖性，其固有吸收剂是在氢化非晶硅（a-Si：H）到氢化微晶硅（μc-Si：H）的过渡相上制造的，进行了调查。通过改变氢的稀释比例，获得了宽带隙原晶硅（pc-Si：H）和μc-Si：H吸收层。在环境温度为25-75℃的AM1.5照明下测量光电流密度-电压（Photo-J-V）特性。我们发现pc-Si：H的太阳能电池存在于a-Si：H到μc-Si：H的过渡边界之下，其转换效率（η）和开路的最低温度系数（TC）电压（V_（oc））。而从a-Si：H到μc-Si：H相变开始时制造的太阳能电池对η和V_（oc）表现出相对较高的TC。实验结果表明，pc-Si; H是用于高温工作的单结或串联太阳能电池顶部电池吸收层的有前途的材料。

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