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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Phase Transition Characteristics and Nonvolatile Memory Device Performance of Zn_xSb_(100-x) Alloys
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Phase Transition Characteristics and Nonvolatile Memory Device Performance of Zn_xSb_(100-x) Alloys

机译：Zn_xSb_（100-x）合金的相变特性和非易失性存储器件性能

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摘要

We propose Zn_xSb_(100-x) alloys as a phase-change material for application in nonvolatile memory, phase-change random access memory (PRAM). The Zn_xSb_(100-x) alloys showed electrical switching between amorphous and crystalline states and their amorphous state showed sheet resistances 10~4-fold higher than that of the crystalline state in 100nm Zn-xSb_(100-x) films. Zn doping reinforced the amorphous stability of the Zn_xSb_(100-x) alloys, which adjusted their switching characteristics. Increasing the concentration of Zn increased the crystallization temperature of the Zn-xSb_(100-x) alloys. PRAM (λ = 0.5 μm) using the Zn_(17)Sb_(83) film presented reversible program performances between SET and RESET. The minimum time for SET switching was 140ns and the required current for RESET switching was 9.6mA in Zn_(17)Sb_(83) PRAM.
机译：我们提出Zn_xSb_（100-x）合金作为相变材料，用于非易失性存储器，相变随机存取存储器（PRAM）。 Zn_xSb_（100-x）合金在非晶态和晶态之间表现出电学转换，其非晶态的薄层电阻比100nm Zn-xSb_（100-x）薄膜的晶态电阻高10〜4倍。锌掺杂增强了Zn_xSb_（100-x）合金的非晶态稳定性，从而调节了它们的开关特性。增加Zn的浓度会增加Zn-xSb_（100-x）合金的结晶温度。使用Zn_（17）Sb_（83）膜的PRAM（λ= 0.5μm）表现出SET和RESET之间可逆的编程性能。在Zn_（17）Sb_（83）PRAM中，SET切换的最短时间为140ns，RESET切换所需的电流为9.6mA。

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