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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Influences of Grain Boundaries on Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains
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Influences of Grain Boundaries on Temperature Dependence of Device Characteristics and on Hot Carrier Effects in Low-Temperature Polycrystalline Silicon Thin Film Transistors Containing Large Grains

机译：晶界对含有大晶粒的低温多晶硅薄膜晶体管中器件特性的温度依赖性和热载流子效应的影响

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摘要

The dependences of field-effect mobility, threshold voltage, and subthreshold slope on temperature for low-temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with large grains were investigated. It was shown that the temperature dependences of field-effect mobility and threshold voltage are affected by the temperature dependence of negatively charged grain-boundary-related interface traps near the surface of polycrystalline silicon, which is explained by considering that the degree of band bending at the surface when gate voltage is equal to threshold voltage decreases with increasing temperature. It was also shown that the behavior of a subthreshold slope can be explained using a term of the grain-boundary-related interface traps near the surface. Moreover, the effects of grain boundaries on hot-carrier generation and hot-carrier-induced degradation were investigated separately, and both processes were experimentally found to be affected by the grain boundaries.
机译：研究了具有大晶粒的低温多晶硅（LTPS）薄膜晶体管（TFT）的场效应迁移率，阈值电压和亚阈值斜率与温度的关系。结果表明，场效应迁移率和阈值电压的温度依赖性受多晶硅表面附近带负电的晶界相关界面陷阱的温度依赖性影响，这可以通过考虑在当栅极电压等于阈值电压时，表面随温度升高而降低。还表明，可以使用表面附近与晶界相关的界面陷阱的术语来解释亚阈值坡度的行为。此外，分别研究了晶界对热载流子生成和热载流子诱导的降解的影响，并通过实验发现这两个过程都受晶界的影响。

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