High-Power Oscillations in Resonant Tunneling Diode Pair Oscillator ICs Fabricated with Metamorphic devices

Koichi Maezawa; Youhei Ookawa; Shigeru Kishimoto; Takashi Mizutani; Misao Takakusaki; Hirofumi Nakata

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High-Power Oscillations in Resonant Tunneling Diode Pair Oscillator ICs Fabricated with Metamorphic devices

机译：变态器件制造的谐振隧道二极管对振荡器IC中的大功率振荡

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A high power operation was demonstrated for novel resonant tunneling diode (RTD) oscillator circuits fabricated with metamorphic RTDs. The circuits consisted of series-connected RTDs with a shorted coplanar waveguide resonator. The bias instability problem of conventional RTD oscillators was solved by separating bias nodes from the oscillating node. This made it possible to use a large RTD area of 10 μm~2 and to supply a large power of about 400 μW to a 50 Ω resistive load at 23 GHz.

机译：对于用变质RTD制造的新型谐振隧穿二极管（RTD）振荡器电路，已证明了其高功率工作。电路由带有短共面波导谐振器的串联RTD组成。通过将偏置节点与振荡节点分离，可以解决传统RTD振荡器的偏置不稳定性问题。这样就可以使用10μm〜2的大RTD面积，并为23 GHz的50Ω电阻负载提供大约400μW的大功率。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2007年第4b期|p.2306-2308|共3页
作者
Koichi Maezawa; Youhei Ookawa; Shigeru Kishimoto; Takashi Mizutani; Misao Takakusaki; Hirofumi Nakata;
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作者单位

Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
negative differential resistance; resonant tunneling; oscillator; metamorphic;

机译：负差分电阻;谐振隧穿;振荡器;变质;

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High-Power Oscillations in Resonant Tunneling Diode Pair Oscillator ICs Fabricated with Metamorphic devices

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