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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal-Oxide-Semiconductor Field-Effect Transistors
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Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal-Oxide-Semiconductor Field-Effect Transistors

机译：亚微米高压双扩散漏极金属-氧化物-半导体场效应晶体管的特性和热载流子可靠性的改进

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摘要

The hot-carrier reliability of 12 V high-voltage n-channel double diffused drain metal-oxide-semiconductor (DDDMOS) field-effect transistors with various n-type double diffusion (NDD) implant dosages is investigated. A high NDD implant dosage results in a high substrate current; however, on-resistance (R_(on)) degradation is low. The damage location shifting toward the channel is responsible for this unexpected low R_(on) degradation. Technology computer-aided design (TCAD) simulation and charge pumping measurements are carried out to identify the damage location. Our analysis results reveal that an increase in NDD dosage is effective for improving the reliability of the DDDMOS field-effect transistors.
机译：研究了具有不同n型双扩散（NDD）注入剂量的12 V高压n沟道双扩散漏极金属氧化物半导体（DDDMOS）场效应晶体管的热载流子可靠性。高NDD注入剂量会导致高衬底电流。但是，导通电阻（R_（on））降低。损坏位置移向通道是造成这种意外的低R_（on）降级的原因。进行技术计算机辅助设计（TCAD）模拟和电荷泵测量，以识别损坏位置。我们的分析结果表明，增加NDD剂量可有效提高DDDMOS场效应晶体管的可靠性。

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