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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
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Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source

机译：一甲基肼为氮源的GaAsN薄膜的化学束外延

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摘要

GaAsN thin films were grown by chemical beam epitaxy (CBE) with monomethylhydrazine (MMHy) as a N source. Processes that determine the N composition in the GaAsN thin films were investigated in the growth temperature range from 340 to 480℃. When growth temperature is low (340-390℃), N composition is mainly determined by the supply of N species generated from MMHy and growth rate, since the desorption rate of N species from the growing surface is low. The effect of the desorption of N species on N composition is enhanced by increasing growth temperature (390-445℃). When growth temperature is high (445-480℃), the degree of N atom segregation from the grown layer increases, resulting in a marked decrease in N composition. Thus, N composition is determined by the balance of supply and desorption of N species, and growth rate.
机译：GaAsN薄膜通过化学束外延（CBE）以一甲基肼（MMHy）为氮源生长。在340至480℃的生长温度下研究了确定GaAsN薄膜中N组成的工艺。当生长温度低（340-390℃）时，N的组成主要取决于MMHy产生的N的供给和生长速率，因为N从生长表面的解吸速率较低。生长温度升高（390-445℃），氮素解吸对氮素组成的影响增强。当生长温度高（445-480℃）时，N原子从生长层中的偏析程度增加，导致N组成明显减少。因此，N的组成取决于N物质的供给和解吸以及生长速率的平衡。

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