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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300℃
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Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300℃

机译：在低于300℃的低压，高浓度臭氧气体中使用紫外光辐射快速氧化硅

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摘要

A low-temperature, damage-free process for growing ultrathin ( < 6nm) silicon dioxide (SiO_2) films was successfully developed. The excitation of low-pressure, highly concentrated O_3 gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200℃. The enhanced oxidation rate was due to an increased supply of O(~1D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO_2 film formed with a uniform thickness and a smooth, distinct SiO_2/Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300℃ as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.
机译：成功开发了一种低温，无损伤的生长超薄（<6nm）二氧化硅（SiO_2）膜的工艺。使用能量小于5.6 eV的光子激发低压高浓度O_3气体，即使过程温度低至200℃，也分别在1分钟和5分钟内产生了2 nm和3 nm的快速生长速率。氧化速率的提高是由于Si表面O（〜1D）原子供应的增加。透射电子显微镜图像显示，形成的SiO_2薄膜具有均匀的厚度和光滑，鲜明的SiO_2 / Si界面。电容电压和电流电压测量表明，200和300℃的成膜薄膜具有令人满意的低密度的移动离子和陷阱电荷以及理想的绝缘性能。

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