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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Impact of SiN on Performance in Novel Complementary Metal-Oxide-Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology
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Impact of SiN on Performance in Novel Complementary Metal-Oxide-Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology

机译：SiN对采用衬底应变硅锗和机械应变硅技术的新型互补金属氧化物半导体结构性能的影响

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摘要

In this paper, we report the fabrication of a SiN-induced mechanically tensile-strained Si n-type metal-oxide-semiconductor field-effect transistor (nMOSFET) and a compressively strained SiGe p-type MOSFET to improve the drive current of both n-and pMOSFETs simultaneously, and we integrated both devices on the same wafer. Individual MOSFET performance can be adjusted independently to their optimum levels due to the separation process for two types of devices. It is found that n- and pMOSFETs in the novel complementary metal-oxide-semiconductor (CMOS) architecture had a better performance, not only a higher drain-to-source saturation current but also a higher transconductance with wide gate voltage swing, than the Si devices used as a control. Although a degraded performance was found in the pMOSFET with a SiN layer, this effect can be minimized by increasing the Ge content in the Si_(1-x)Ge_x conducting channel, thus demonstrating that the flow has a great flexibility for developing a next-generation high-performance CMOS devices.
机译：在本文中，我们报告了一种SiN诱导的机械拉伸应变的Si n型金属氧化物半导体场效应晶体管（nMOSFET）和压缩应变的SiGe p型MOSFET的制造，以改善n -和pMOSFET同时使用，我们将两个器件集成在同一晶片上。由于两种类型器件的分离过程，各个MOSFET的性能可以独立调节至最佳水平。发现新型互补金属氧化物半导体（CMOS）架构中的n和pMOSFET具有更好的性能，不仅具有更高的漏极至源极饱和电流，而且具有比宽栅极电压摆幅更高的跨导。硅器件用作控制。尽管在具有SiN层的pMOSFET中发现性能下降，但是可以通过增加Si_（1-x）Ge_x导电通道中的Ge含量来最大程度地降低这种影响，从而证明该流具有很大的灵活性，可以开发出下一个新一代高性能CMOS器件。

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