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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Characteristics of P-Substrate Small-Aperture Holey Light-Emitting Diodes for Fiber-Optic Applications
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Characteristics of P-Substrate Small-Aperture Holey Light-Emitting Diodes for Fiber-Optic Applications

机译:用于光纤应用的P衬底小孔径带孔发光二极管的特性

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摘要

A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.
机译:报道了在830 nm范围内的p型GaAs衬底上的小孔径氧化物限制的多孔发光二极管(LED)。该设备由底部分布的布拉格反射器(DBR),量子阱(QW)和顶部DBR组成,中心具有小孔的多孔结构,用于光提取。可以提取内部反射的自发辐射,并将其从蚀刻的孔中准直出来。高分辨率成像研究表明,该装置主要通过中心蚀刻孔区域发出较窄的光束,使其适合于光纤应用。

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