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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Observation of Initial Oxidation on Si(110)-16 x 2 surface by Scanning Tunneling Microscopy
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Observation of Initial Oxidation on Si(110)-16 x 2 surface by Scanning Tunneling Microscopy

机译：扫描隧道显微镜观察Si（110）-16 x 2表面的初始氧化

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The initial oxidation of a Si(110)-16 x 2 clean surface, both at room temperature (RT) and elevated temperatures (635, 660℃), was investigated by scanning tunneling microscopy (STM). The effects of annealing (300℃, 15min) on an RT-oxidized surface were also investigated. On the RT-oxidized surface, a BN site, detected as a bright (B) spot in the filled-state image but as a normal (N) 16x2 adatom in the empty-state image, was observed. After annealing, DD, BD, and BB sites were found to exist in addition to the BN site. Here, DD (BD, BB) is a site that appears dark (bright, bright) in its filled-state image and appears dark (dark, bright) in its empty-state image. The relative population is DD > BD ≈ BN > BB. For oxidation at 635℃, DD, BD, and BN sites were observed. For oxidation at 660℃, only the BD site was observed. On the basis of these results, an atomistic process during the initial oxidation of the Si(110)-16 x 2 surface is discussed.
机译：通过扫描隧道显微镜（STM）研究了在室温（RT）和高温（635、660℃）下Si（110）-16 x 2洁净表面的初始氧化。还研究了退火（300℃，15min）对RT-氧化表面的影响。在RT氧化的表面上，观察到一个BN部位，该部位在填充状态图像中检测为亮点（B），而在空状态图像中检测为正常（N）16x2原子。退火后，发现除了BN位点外，还存在DD，BD和BB位点。在此，DD（BD，BB）是一个在填充状态图像中显示为暗（明亮，明亮）而在空状态图像中显示为暗（黑暗，明亮）的位置。相对人口为DD> BD≈BN> BB。在635℃氧化，观察到DD，BD和BN位点。在660℃氧化时，仅观察到BD位点。基于这些结果，讨论了Si（110）-16 x 2表面初始氧化过程中的原子过程。

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