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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Effect of Interface Layers on Phase-Change Recording Material Analyzed by Hard X-ray Photoelectron Spectroscopy Method
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Effect of Interface Layers on Phase-Change Recording Material Analyzed by Hard X-ray Photoelectron Spectroscopy Method

机译：硬X射线光电子能谱法分析界面层对相变记录材料的影响

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摘要

The influence of interface layers on the chemical and electronic states of a phase-change recording material, GeBiTe (GBT) alloy, used in high-speed rewritable HD DVD media was investigated for the first time by hard-X-ray photoelectron spectroscopy (HX-PES). The binding state of elements for the amorphous state of the phase-change recording film with interface layers is closer to that of the crystalline state than the amorphous film without interface layers. The density of states (DOS) for the valence band of the amorphous state without an interface layer was smaller than that of the crystalline state. The band-edge energy of the amorphous state without an interface layer was lower than that of the crystalline state by about 0.5 eV. On the other hand, the DOS and the band-edge energy of the amorphous state of GBT with interface layers were almost the same as those of the crystalline state. This result may lead to almost the same carrier density for electrical conduction for the crystalline state as the amorphous state, which is totally unexpected, thus very interesting, because the atomic arrangements should differ from each other. We speculate that these effects are a factor allowing high-speed crystallization.
机译：硬X射线光电子能谱（HX）首次研究了界面层对用于高速可重写HD DVD介质的相变记录材料GeBiTe（GBT）合金的化学和电子态的影响-PES）。与具有界面层的非晶膜相比，具有界面层的相变记录膜的非晶态的元素的结合状态更接近于结晶态。没有界面层的非晶态价态的态密度（DOS）小于结晶态。没有界面层的非晶态的带边能量比结晶态的带边能量低约0.5 eV。另一方面，具有界面层的GBT的非晶态的DOS和带边缘能量几乎与晶态的相同。该结果可能导致用于结晶状态的导电的载流子密度与非晶态几乎相同，这是完全出乎意料的，因此非常有趣，因为原子排列应该彼此不同。我们推测这些影响是允许高速结晶的因素。

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