Observation of Inhomogeneity of Schottky Barrier Height on 4H-SiC Using the Electrochemical Deposition

Masashi Kato; Kazuya Ogawa; Masaya Ichimura

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Observation of Inhomogeneity of Schottky Barrier Height on 4H-SiC Using the Electrochemical Deposition

机译：电化学沉积法观察4H-SiC上肖特基势垒高度的不均匀性

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We observed regions with a low Schottky barrier height on 4H-SiC surfaces by the electrochemical deposition of ZnO. In the initial stage of the deposition, ZnO grew preferentially in the regions with a low Schottky barrier height, and we were able to obse

机译：我们通过电化学沉积ZnO在4H-SiC表面观察到了具有低肖特基势垒高度的区域。在沉积的初始阶段，ZnO在肖特基势垒高度低的区域优先生长，我们能够观察到

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《Japanese journal of applied physics》 |2007年第44期|997-999|共3页
作者
Masashi Kato; Kazuya Ogawa; Masaya Ichimura;
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正文语种 eng
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4H-SiC; schottky barrier height; electrochemical deposition; ZnO film; defect;

机译：4H-SiC;肖特基势垒高度;电化学沉积ZnO薄膜缺陷;

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专利

1. Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO [J] . Masashi Kato, Hidenori Ono, Masaya Ichimura, Japanese journal of applied physics . 2011,第3ISSUE1期

机译：ZnO电化学沉积降低4H-SiC肖特基接触中肖特基势垒高度的缺陷的观察
2. Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition [J] . Masashi Kato, Hidenori Ono, Kazuya Ogawa, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2008,第122期

机译：电化学沉积观察4H-SiC中肖特基势垒高度低的区域
3. Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition [J] . Masashi Kato, Hidenori Ono, Kazuya Ogawa, 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2008,第121期

机译：电化学沉积观察4H-SiC中肖特基势垒高度低的区域
4. Correlation between Schottky contact characteristics and regions with a low barrier height revealed by the electrochemical deposition on 4H-SiC [C] . M. Kato, H. Ono, M. Ichimura Silicon carbide and related materials 2009 . 2010

机译：通过在4H-SiC上进行电化学沉积揭示的肖特基接触特性与势垒高度低的区域之间的相关性
5. Toward understanding the electrical properties of metal/semiconductor Schottky contacts: The effects of barrier inhomogeneities and geometry in bulk and nanoscale structures. [D] . Sarpatwari, Karthik. 2009

机译：理解金属/半导体肖特基接触的电性能：块体和纳米级结构中势垒不均匀性和几何形状的影响。
6. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes [O] . Ashutosh Kumar, M. Heilmann, Michael Latzel, -1

机译：GaN基纳米级肖特基势垒二极管中的势垒不均匀性限制了电流和1 / f噪声的传输
7. The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes [O] . Meyer, W.E. (Walter Ernst), Omotoso, Ezekiel, Auret, F.D. (Francois Danie), 2015

机译：高能电子辐照对肖特基势垒高度和Ni / 4H-siC肖特基二极管的Richardson常数的影响

Observation of Inhomogeneity of Schottky Barrier Height on 4H-SiC Using the Electrochemical Deposition

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